Monte Carlo Analysis of Silicon Carbide Neutron Detector With Double Conversion Layer
文献类型：期刊论文
| 作者 | Zhang, Lilong1; Wang, Ying1; Guo, Haomin1; Hu, Haifan2; Liu, Yuntao3; Chen, Size4 |
| 刊名 | IEEE SENSORS JOURNAL
 |
| 出版日期 | 2021-09-15 |
| 卷号 | 21 |
| ISSN号 | 1530-437X |
| 关键词 | Neutrons Detectors Silicon carbide Silicon Thermal analysis Geometry Gamma-rays Neutron detectors energy deposition detection efficiency double conversion layer |
| DOI | 10.1109/JSEN.2021.3094803 |
| 通讯作者 | Wang, Ying(wangying7711@yahoo.com) |
| 英文摘要 | In this paper, the performance of SiC-based neutron detector was investigated using GEANT4 toolkit. Thin-film-coated and trench type neutron detectors were considered and their intrinsic detection efficiency were calculated according to the relevant structural parameters, with Low-Level Discriminator (LLD) value fixed at 300 keV. For thin-film-coated detector, the analysis carried out for varied layer thicknesses of B-10 and (LiF)-Li-6 showed that the intrinsic detection efficiency increases with the increase of thickness, and reaches the maximum value at the critical thickness and thereafter found to gradually decrease. Due to the self-absorption effect of the conversion material, the intrinsic detection efficiency of the thin-film-coated SiC neutron detector is limited to less than 5%. Fortunately, the trench type SiC neutron detector can break through this limitation. However, under current process conditions, SiC can only be used for shallow trench etching. In order to increase the neutron detection efficiency as high as possible in the limited trench depth, we have proposed a scheme of filling the trench with a double conversion layer, which can significantly improve the intrinsic detection efficiency of neutrons compared with the traditional trench structure with a single conversion layer. Apart from estimating the intrinsic detection efficiency, the energy deposition spectrum in the SiC detector region by the produced secondary charged particles upon thermal neutron interaction with conversion material(B-10 and (LiF)-Li-6) have also been researched for various structural parameters such as conversion layer thickness, trench width and trench gap of detector. |
| WOS关键词 | RADIATION-DAMAGE ; SEMICONDUCTOR ; SIMULATION ; EFFICIENCY ; DESIGN ; BORON ; HE-3 ; FILM ; PERFORMANCE |
| 资助项目 | National Research and Development Program for Major Research Instruments of China[62027814] |
| WOS研究方向 | Engineering ; Instruments & Instrumentation ; Physics |
| 语种 | 英语 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| WOS记录号 | WOS:000703056000058 |
| 资助机构 | National Research and Development Program for Major Research Instruments of China |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/125501]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 通讯作者 | Wang, Ying |
| 作者单位 | 1.Hangzhou Dianzi Univ, Sch Elect & Informat, Hangzhou 310018, Peoples R China 2.Aerosp Sci & Technol Corp, Lab X, Inst China 2, Beijing 100854, Peoples R China 3.Harbin Engn Univ, Coll Informat & Commun Engn, Harbin 150001, Peoples R China 4.Chinese Acad Sci, Inst Nucl Energy Safety Technol, Hefei Inst Phys Sci, Hefei 230031, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Lilong,Wang, Ying,Guo, Haomin,et al. Monte Carlo Analysis of Silicon Carbide Neutron Detector With Double Conversion Layer[J]. IEEE SENSORS JOURNAL,2021,21. |
| APA | Zhang, Lilong,Wang, Ying,Guo, Haomin,Hu, Haifan,Liu, Yuntao,&Chen, Size.(2021).Monte Carlo Analysis of Silicon Carbide Neutron Detector With Double Conversion Layer.IEEE SENSORS JOURNAL,21. |
| MLA | Zhang, Lilong,et al."Monte Carlo Analysis of Silicon Carbide Neutron Detector With Double Conversion Layer".IEEE SENSORS JOURNAL 21(2021). |
入库方式： OAI收割
来源：合肥物质科学研究院
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