Planar Hall effect in the quasi-one-dimensional topological superconductor TaSe3
文献类型：期刊论文
| 作者 | Yang, X. C.1,2; Luo, X.1 ; Gao, J. J.1,2; Jiang, Z. Z.1,2; Wang, W.1,2; Wang, T. Y.1,2; Si, J. G.1,2; Xi, C. Y.3; Song, W. H.1; Sun, Y. P.1,3,4
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| 刊名 | PHYSICAL REVIEW B
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| 出版日期 | 2021-10-05 |
| 卷号 | 104 |
| ISSN号 | 2469-9950 |
| DOI | 10.1103/PhysRevB.104.155106 |
| 通讯作者 | Luo, X.(xluo@issp.ac.cn) |
| 英文摘要 | A novel planar Hall effect (PHE) is induced by the chiral anomaly or nontrivial Berry curvature, which has been predicted in nonmagnetic Weyl/Dirac semimetals. Recent theories suggest such an effect exists in three-dimensional (3D) topological insulators even in the absence of chiral anomaly. In this paper, we present a detailed analysis of the transport properties in the quasi-1D TaSe3, a candidate of topological superconductor (TSC) predicted by the theorist. There are some interesting observations on TaSe3. (1) The electron-hole compensation has been confirmed by the Hall effect measurements around T-com similar to 30K, which accounts for the extremely large magnetoresistance in TaSe3. (2) The remarkable PHE and anisotropic magnetoresistance (AMR) are observed in TaSe3. Based on the detailed analysis of the PHE and AMR curves, the origin of PHE in TaSe3 is suggested to originate from the resistivity anisotropy induced by the difference of field-induced anisotropic scattering in surface Dirac fermions of various spins. (3) We observed the successive Fermi surface reconstruction induced by the temperature around T * similar to 50K, where the amplitude of intrinsic PHE drops sharply related to the suppression of the topological surface state. Meanwhile, the d rho(xx) (T)/dT curve presents a broad anomaly around T-peak similar to 70K, which can be explained as a possible charge-density wave associated with imperfect Fermi surface nesting. PHE provides an effective method to understand the relationship between the electronic transport properties and the topological structure in quasi-1D TSC TaSe3. |
| WOS关键词 | DIRAC SEMIMETAL ; TEMPERATURE ; INSULATOR ; TRANSPORT |
| 资助项目 | National Natural Science Foundation of China[U1932217] ; National Natural Science Foundation of China[U1832141] ; Chinese Academy of Sciences' Large-Scale Scientific Facility[U1932217] ; Chinese Academy of Sciences' Large-Scale Scientific Facility[U1832141] ; National Key Research and Development Program[2016YFA0300404] ; National Nature Science Foundation of China[11674326] ; National Nature Science Foundation of China[11874357] |
| WOS研究方向 | Materials Science ; Physics |
| 语种 | 英语 |
| 出版者 | AMER PHYSICAL SOC |
| WOS记录号 | WOS:000705614200001 |
| 资助机构 | National Natural Science Foundation of China ; Chinese Academy of Sciences' Large-Scale Scientific Facility ; National Key Research and Development Program ; National Nature Science Foundation of China |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/125509]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 通讯作者 | Luo, X. |
| 作者单位 | 1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, HFIPS, Hefei 230031, Peoples R China 2.Univ Sci & Technol China, Grad Sch, Sci Isl Branch, Hefei 230026, Anhui, Peoples R China 3.Chinese Acad Sci, High Magnet Field Lab, HFIPS, Anhui Prov Key Lab Condensed Matter Phys Extreme, Hefei 230031, Peoples R China 4.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, X. C.,Luo, X.,Gao, J. J.,et al. Planar Hall effect in the quasi-one-dimensional topological superconductor TaSe3[J]. PHYSICAL REVIEW B,2021,104. |
| APA | Yang, X. C..,Luo, X..,Gao, J. J..,Jiang, Z. Z..,Wang, W..,...&Sun, Y. P..(2021).Planar Hall effect in the quasi-one-dimensional topological superconductor TaSe3.PHYSICAL REVIEW B,104. |
| MLA | Yang, X. C.,et al."Planar Hall effect in the quasi-one-dimensional topological superconductor TaSe3".PHYSICAL REVIEW B 104(2021). |
入库方式： OAI收割
来源：合肥物质科学研究院
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