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Microstructural Engineering of Solution-Processed Epitaxial La-Doped BaSnO3 Transparent Conducting Films

文献类型：期刊论文

作者He, Yuandi1,2; Wei, Renhuai1; Zhou, Chen1,2; Cheng, Wangping1; Ding, Xin3; Shao, Cheng1; Hu, Ling1; Song, Wenhai1; Zhu, Xuebin1; Sun, Yuping4,5
刊名CRYSTAL GROWTH & DESIGN
出版日期2021-10-06
卷号21
ISSN号1528-7483
DOI10.1021/acs.cgd.1c00698
通讯作者Wei, Renhuai(rhwei@issp.ac.cn) ; Zhu, Xuebin(xbzhu@issp.ac.cn)
英文摘要Epitaxial La-doped BaSnO3 (BLSO) thin films were fabricated on a SrTiO3 (100) substrate by a cost-efficient and scalable solution deposition method. Microstructures and optoelectronic properties of the BLSO thin films can be controlled by the metal cation concentration (MCC) of the initially used precursor solution. It is found that thin films with a denser microstructure, lower resistivity, higher optical transmittance, and good thermal stability can be obtained from the solution with a lower MCC. The growth mechanisms of the initial nucleation are explained in detail for different MCC-derived thin films. Most of all, the highest room-temperature carrier mobility with the value of 53 cm(2) V-1 s(-1) was achieved among all solution-processed donor-doped BaSnO3 thin films to date. The herein proposed microstructural engineering of the BLSO thin films contributes a sensible and feasible avenue to optimize the optoelectronic performance of transparent conducting thin films by a simple solution approach.
WOS关键词THIN-FILMS ; OPTOELECTRONIC PROPERTIES
资助项目National Natural Science Foundation of China[11604337] ; Key Lab of Photovoltaic and Energy Conservation Materials, Chinese Academy of Sciences[PECL2019KF011]
WOS研究方向Chemistry ; Crystallography ; Materials Science
语种英语
出版者AMER CHEMICAL SOC
WOS记录号WOS:000706179400035
资助机构National Natural Science Foundation of China ; Key Lab of Photovoltaic and Energy Conservation Materials, Chinese Academy of Sciences
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/125553]  
专题中国科学院合肥物质科学研究院
通讯作者Wei, Renhuai; Zhu, Xuebin
作者单位1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, HFIPS, Hefei 230031, Peoples R China
2.Univ Sci & Technol China, Hefei 230026, Peoples R China
3.Chinese Acad Sci, Inst Solid State Phys, Key Lab Photovolta & Energy Conservat Mat, HFIPS, Hefei 230031, Peoples R China
4.Chinese Acad Sci, High Magnet Field Lab, HFIPS, Hefei 230031, Peoples R China
5.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China
推荐引用方式
GB/T 7714		 He, Yuandi,Wei, Renhuai,Zhou, Chen,et al. Microstructural Engineering of Solution-Processed Epitaxial La-Doped BaSnO3 Transparent Conducting Films[J]. CRYSTAL GROWTH & DESIGN,2021,21.
APA He, Yuandi.,Wei, Renhuai.,Zhou, Chen.,Cheng, Wangping.,Ding, Xin.,...&Sun, Yuping.(2021).Microstructural Engineering of Solution-Processed Epitaxial La-Doped BaSnO3 Transparent Conducting Films.CRYSTAL GROWTH & DESIGN,21.
MLA He, Yuandi,et al."Microstructural Engineering of Solution-Processed Epitaxial La-Doped BaSnO3 Transparent Conducting Films".CRYSTAL GROWTH & DESIGN 21(2021).

入库方式： OAI收割

来源：合肥物质科学研究院

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