Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
文献类型：期刊论文
| 作者 | Xiang Zhang ; Zhaolong Chen ; Hongliang Chang; Jianchang Yan ; Shenyuan Yang ; Junxi Wang ; Peng Gao; Tongbo Wei |
| 刊名 | JOVE-JOURNAL OF VISUALIZED EXPERIMENTS
 |
| 出版日期 | 2020 |
| 卷号 | 160页码:e60167 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30205]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Xiang Zhang ; Zhaolong Chen ; Hongliang Chang; Jianchang Yan ; Shenyuan Yang ; Junxi Wang ; Peng Gao; Tongbo Wei. Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes[J]. JOVE-JOURNAL OF VISUALIZED EXPERIMENTS,2020,160:e60167. |
| APA | Xiang Zhang ; Zhaolong Chen ; Hongliang Chang; Jianchang Yan ; Shenyuan Yang ; Junxi Wang ; Peng Gao; Tongbo Wei.(2020).Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes.JOVE-JOURNAL OF VISUALIZED EXPERIMENTS,160,e60167. |
| MLA | Xiang Zhang ; Zhaolong Chen ; Hongliang Chang; Jianchang Yan ; Shenyuan Yang ; Junxi Wang ; Peng Gao; Tongbo Wei."Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes".JOVE-JOURNAL OF VISUALIZED EXPERIMENTS 160(2020):e60167. |
入库方式： OAI收割
来源：半导体研究所
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