中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light-Emitting Diodes

文献类型:期刊论文

作者Lei Wang ;   Ningyang Liu;   Bo Li ;   Huiping Zhu;   Xiaoting Shan;   Qingxi Yuan;   Xuewen Zhang;   Zheng Gong;   Fazhan Zhao ;   Naixin Liu;   Mengxin Liu;   Binhong Li;   Jiantou Gao;   Yang Huang ;   Jianqun Yang;   Xingji Li;   Jiajun Luo;   Zhengsheng Han, and Xinyu
刊名IEEE TRANSACTIONS ON NUCLEAR SCIENCE
出版日期2020
卷号67期号:7页码:1345-1350
源URL[http://ir.semi.ac.cn/handle/172111/30472]  
专题半导体研究所_中科院半导体照明研发中心
推荐引用方式
GB/T 7714
Lei Wang ; Ningyang Liu; Bo Li ; Huiping Zhu; Xiaoting Shan; Qingxi Yuan; Xuewen Zhang; Zheng Gong; Fazhan Zhao ; Naixin Liu; Mengxin Liu; Binhong Li; Jiantou Gao; Yang Huang ; Jianqun Yang; Xingji Li; Jiajun Luo; Zhengsheng Han, and Xinyu. Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light-Emitting Diodes[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2020,67(7):1345-1350.
APA Lei Wang ; Ningyang Liu; Bo Li ; Huiping Zhu; Xiaoting Shan; Qingxi Yuan; Xuewen Zhang; Zheng Gong; Fazhan Zhao ; Naixin Liu; Mengxin Liu; Binhong Li; Jiantou Gao; Yang Huang ; Jianqun Yang; Xingji Li; Jiajun Luo; Zhengsheng Han, and Xinyu.(2020).Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light-Emitting Diodes.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,67(7),1345-1350.
MLA Lei Wang ; Ningyang Liu; Bo Li ; Huiping Zhu; Xiaoting Shan; Qingxi Yuan; Xuewen Zhang; Zheng Gong; Fazhan Zhao ; Naixin Liu; Mengxin Liu; Binhong Li; Jiantou Gao; Yang Huang ; Jianqun Yang; Xingji Li; Jiajun Luo; Zhengsheng Han, and Xinyu."Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light-Emitting Diodes".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 67.7(2020):1345-1350.

入库方式: OAI收割

来源:半导体研究所

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