Freestanding GaN substrate enabled by dual-stack multilayer graphene via hydride vapor phase epitaxy
文献类型：期刊论文
| 作者 | Jie Su; Dongdong Liang; Yun Zhao; Jiankun Yang; Hongliang Chang; Ruifei Duan; Junxi Wang; Lianfeng Sun; Tongbo Wei |
| 刊名 | Applied Surface Science
 |
| 出版日期 | 2020 |
| 卷号 | 526页码:146747 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30097]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Jie Su; Dongdong Liang; Yun Zhao; Jiankun Yang; Hongliang Chang; Ruifei Duan; Junxi Wang; Lianfeng Sun; Tongbo Wei. Freestanding GaN substrate enabled by dual-stack multilayer graphene via hydride vapor phase epitaxy[J]. Applied Surface Science,2020,526:146747. |
| APA | Jie Su; Dongdong Liang; Yun Zhao; Jiankun Yang; Hongliang Chang; Ruifei Duan; Junxi Wang; Lianfeng Sun; Tongbo Wei.(2020).Freestanding GaN substrate enabled by dual-stack multilayer graphene via hydride vapor phase epitaxy.Applied Surface Science,526,146747. |
| MLA | Jie Su; Dongdong Liang; Yun Zhao; Jiankun Yang; Hongliang Chang; Ruifei Duan; Junxi Wang; Lianfeng Sun; Tongbo Wei."Freestanding GaN substrate enabled by dual-stack multilayer graphene via hydride vapor phase epitaxy".Applied Surface Science 526(2020):146747. |
入库方式： OAI收割
来源：半导体研究所
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