Performance deterioration of GaN-based laser diode by V-pits in the upper waveguide layer
文献类型：期刊论文
| 作者 | Feng Liang ; Degang Zhao; Desheng Jiang; Wenjie Wang; Zongshun Liu; Jianjun Zhu; Ping Chen; Jing Yang and Liqun Zhang |
| 刊名 | NANOPHOTONICS
 |
| 出版日期 | 2020 |
| 卷号 | 9期号:3页码:667-674 |
| 公开日期 | 2020 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30511]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Feng Liang ; Degang Zhao; Desheng Jiang; Wenjie Wang; Zongshun Liu; Jianjun Zhu; Ping Chen; Jing Yang and Liqun Zhang. Performance deterioration of GaN-based laser diode by V-pits in the upper waveguide layer[J]. NANOPHOTONICS,2020,9(3):667-674. |
| APA | Feng Liang ; Degang Zhao; Desheng Jiang; Wenjie Wang; Zongshun Liu; Jianjun Zhu; Ping Chen; Jing Yang and Liqun Zhang.(2020).Performance deterioration of GaN-based laser diode by V-pits in the upper waveguide layer.NANOPHOTONICS,9(3),667-674. |
| MLA | Feng Liang ; Degang Zhao; Desheng Jiang; Wenjie Wang; Zongshun Liu; Jianjun Zhu; Ping Chen; Jing Yang and Liqun Zhang."Performance deterioration of GaN-based laser diode by V-pits in the upper waveguide layer".NANOPHOTONICS 9.3(2020):667-674. |
入库方式： OAI收割
来源：半导体研究所
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