中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Epitaxial Growth and Optically Pumped Stimulated Emission in AlGaN/InGaN Ultraviolet Multi-Quantum-Well Structures

文献类型:期刊论文

作者PING CHEN;   YOUNG JAE PARK;   YUH-SHIUAN LIU;   THEERADETCH DETCHPROHM;   P. DOUGLAS YODER;   SHYH-CHIANG SHEN;   RUSSELL D. DUPUIS
刊名JOURNAL OF ELECTRONIC MATERIALS
出版日期2020
卷号49期号:4页码:2326-2331
公开日期2020
源URL[http://ir.semi.ac.cn/handle/172111/30489]  
专题半导体研究所_光电子研究发展中心
推荐引用方式
GB/T 7714
PING CHEN; YOUNG JAE PARK; YUH-SHIUAN LIU; THEERADETCH DETCHPROHM; P. DOUGLAS YODER; SHYH-CHIANG SHEN; RUSSELL D. DUPUIS. Epitaxial Growth and Optically Pumped Stimulated Emission in AlGaN/InGaN Ultraviolet Multi-Quantum-Well Structures[J]. JOURNAL OF ELECTRONIC MATERIALS,2020,49(4):2326-2331.
APA PING CHEN; YOUNG JAE PARK; YUH-SHIUAN LIU; THEERADETCH DETCHPROHM; P. DOUGLAS YODER; SHYH-CHIANG SHEN; RUSSELL D. DUPUIS.(2020).Epitaxial Growth and Optically Pumped Stimulated Emission in AlGaN/InGaN Ultraviolet Multi-Quantum-Well Structures.JOURNAL OF ELECTRONIC MATERIALS,49(4),2326-2331.
MLA PING CHEN; YOUNG JAE PARK; YUH-SHIUAN LIU; THEERADETCH DETCHPROHM; P. DOUGLAS YODER; SHYH-CHIANG SHEN; RUSSELL D. DUPUIS."Epitaxial Growth and Optically Pumped Stimulated Emission in AlGaN/InGaN Ultraviolet Multi-Quantum-Well Structures".JOURNAL OF ELECTRONIC MATERIALS 49.4(2020):2326-2331.

入库方式: OAI收割

来源:半导体研究所

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