Comparative Study on the Luminescence Properties of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells with Different Barrier Thickness
文献类型：期刊论文
| 作者 | Wei Liu; Feng Liang; Degang Zhao; Jing Yang; Desheng Jiang; Jianjun Zhu ; Zongshun Liu |
| 刊名 | JOURNAL OF ELECTRONIC MATERIALS
 |
| 出版日期 | 2020 |
| 卷号 | 49期号:6页码:3877-3882 |
| 公开日期 | 2020 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30403]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Wei Liu; Feng Liang; Degang Zhao; Jing Yang; Desheng Jiang; Jianjun Zhu ; Zongshun Liu. Comparative Study on the Luminescence Properties of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells with Different Barrier Thickness[J]. JOURNAL OF ELECTRONIC MATERIALS,2020,49(6):3877-3882. |
| APA | Wei Liu; Feng Liang; Degang Zhao; Jing Yang; Desheng Jiang; Jianjun Zhu ; Zongshun Liu.(2020).Comparative Study on the Luminescence Properties of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells with Different Barrier Thickness.JOURNAL OF ELECTRONIC MATERIALS,49(6),3877-3882. |
| MLA | Wei Liu; Feng Liang; Degang Zhao; Jing Yang; Desheng Jiang; Jianjun Zhu ; Zongshun Liu."Comparative Study on the Luminescence Properties of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells with Different Barrier Thickness".JOURNAL OF ELECTRONIC MATERIALS 49.6(2020):3877-3882. |
入库方式： OAI收割
来源：半导体研究所
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