Suppression the formation of V-pits in InGaN/ GaN multi-quantum well growth and its effect on the performance of GaN based laser diodes
文献类型：期刊论文
| 作者 | J. Yang ; D.G. Zhao; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang; S.T. Liu; Y. Xing |
| 刊名 | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| 出版日期 | 2020 |
| 卷号 | 822页码:153571 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30256]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | J. Yang ;D.G. Zhao; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang; S.T. Liu; Y. Xing. Suppression the formation of V-pits in InGaN/ GaN multi-quantum well growth and its effect on the performance of GaN based laser diodes[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2020,822:153571. |
| APA | J. Yang ;D.G. Zhao; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang; S.T. Liu; Y. Xing.(2020).Suppression the formation of V-pits in InGaN/ GaN multi-quantum well growth and its effect on the performance of GaN based laser diodes.JOURNAL OF ALLOYS AND COMPOUNDS,822,153571. |
| MLA | J. Yang ;D.G. Zhao; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang; S.T. Liu; Y. Xing."Suppression the formation of V-pits in InGaN/ GaN multi-quantum well growth and its effect on the performance of GaN based laser diodes".JOURNAL OF ALLOYS AND COMPOUNDS 822(2020):153571. |
入库方式： OAI收割
来源：半导体研究所
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