Interlayer Band-to-Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field-Effect Transistors
文献类型：期刊论文
| 作者 | Quanshan Lv; Faguang Yan; Nobuya Mori; Wenkai Zhu; Ce Hu; Zakhar R. Kudrynskyi; Zakhar D. Kovalyuk; Amalia Patanè; Kaiyou Wang |
| 刊名 | ADVANCED FUNCTIONAL MATERIALS
 |
| 出版日期 | 2020 |
| 卷号 | 30期号:15页码:1910713 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30522]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Quanshan Lv; Faguang Yan; Nobuya Mori; Wenkai Zhu; Ce Hu; Zakhar R. Kudrynskyi; Zakhar D. Kovalyuk; Amalia Patanè; Kaiyou Wang. Interlayer Band-to-Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field-Effect Transistors[J]. ADVANCED FUNCTIONAL MATERIALS,2020,30(15):1910713. |
| APA | Quanshan Lv; Faguang Yan; Nobuya Mori; Wenkai Zhu; Ce Hu; Zakhar R. Kudrynskyi; Zakhar D. Kovalyuk; Amalia Patanè; Kaiyou Wang.(2020).Interlayer Band-to-Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field-Effect Transistors.ADVANCED FUNCTIONAL MATERIALS,30(15),1910713. |
| MLA | Quanshan Lv; Faguang Yan; Nobuya Mori; Wenkai Zhu; Ce Hu; Zakhar R. Kudrynskyi; Zakhar D. Kovalyuk; Amalia Patanè; Kaiyou Wang."Interlayer Band-to-Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field-Effect Transistors".ADVANCED FUNCTIONAL MATERIALS 30.15(2020):1910713. |
入库方式： OAI收割
来源：半导体研究所
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