Growth mechanism for vertically oriented layered In2Se3 nanoplates
文献类型：期刊论文
| 作者 | Yuan-Fei Gao; Si-Ming Pang; Hai-Hong Bao; Xian-Yun Peng; Yu-Jia Sun; Shu-Liang Ren; Da Meng; Jun Zhang |
| 刊名 | PHYSICAL REVIEW MATERIALS
 |
| 出版日期 | 2020 |
| 卷号 | 4期号:3页码:034002 |
| 公开日期 | 2020 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30494]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Yuan-Fei Gao; Si-Ming Pang; Hai-Hong Bao; Xian-Yun Peng; Yu-Jia Sun; Shu-Liang Ren; Da Meng; Jun Zhang. Growth mechanism for vertically oriented layered In2Se3 nanoplates[J]. PHYSICAL REVIEW MATERIALS,2020,4(3):034002. |
| APA | Yuan-Fei Gao; Si-Ming Pang; Hai-Hong Bao; Xian-Yun Peng; Yu-Jia Sun; Shu-Liang Ren; Da Meng; Jun Zhang.(2020).Growth mechanism for vertically oriented layered In2Se3 nanoplates.PHYSICAL REVIEW MATERIALS,4(3),034002. |
| MLA | Yuan-Fei Gao; Si-Ming Pang; Hai-Hong Bao; Xian-Yun Peng; Yu-Jia Sun; Shu-Liang Ren; Da Meng; Jun Zhang."Growth mechanism for vertically oriented layered In2Se3 nanoplates".PHYSICAL REVIEW MATERIALS 4.3(2020):034002. |
入库方式： OAI收割
来源：半导体研究所
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