Spin relaxation induced by interfacial effects in n-GaN/MgO/Co spin injectors
文献类型：期刊论文
| 作者 | Xingchen Liu; Ning Tang; Chi Fang; Caihua Wan; Shixiong Zhang; Xiaoyue Zhang; Hongming Guan; Yunfan Zhang; Xuan Qian; Yang Ji; Weikun Ge; Xiufeng Han ; Bo Shen |
| 刊名 | RSC ADVANCES
 |
| 出版日期 | 2020 |
| 卷号 | 10期号:21页码:12547-12553 |
| 公开日期 | 2020 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30492]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Xingchen Liu; Ning Tang; Chi Fang; Caihua Wan; Shixiong Zhang; Xiaoyue Zhang; Hongming Guan; Yunfan Zhang; Xuan Qian; Yang Ji; Weikun Ge; Xiufeng Han ; Bo Shen. Spin relaxation induced by interfacial effects in n-GaN/MgO/Co spin injectors[J]. RSC ADVANCES,2020,10(21):12547-12553. |
| APA | Xingchen Liu; Ning Tang; Chi Fang; Caihua Wan; Shixiong Zhang; Xiaoyue Zhang; Hongming Guan; Yunfan Zhang; Xuan Qian; Yang Ji; Weikun Ge; Xiufeng Han ; Bo Shen.(2020).Spin relaxation induced by interfacial effects in n-GaN/MgO/Co spin injectors.RSC ADVANCES,10(21),12547-12553. |
| MLA | Xingchen Liu; Ning Tang; Chi Fang; Caihua Wan; Shixiong Zhang; Xiaoyue Zhang; Hongming Guan; Yunfan Zhang; Xuan Qian; Yang Ji; Weikun Ge; Xiufeng Han ; Bo Shen."Spin relaxation induced by interfacial effects in n-GaN/MgO/Co spin injectors".RSC ADVANCES 10.21(2020):12547-12553. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。