Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr0.2Ti0.8O3/Co/Pt Heterostructure
文献类型：期刊论文
| 作者 | Zengyao Ren; Mengxi Wang; Pengfei Liu; Qi Liu; Kaiyou Wang; Gehard Jakob; Jikun Chen; Kangkang Meng; Xiaoguang Xu; Jun Miao; Yong Jiang |
| 刊名 | ADVANCED ELECTRONIC MATERIALS
 |
| 出版日期 | 2020 |
| 卷号 | 6期号:6页码:2000102 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30392]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Zengyao Ren; Mengxi Wang; Pengfei Liu; Qi Liu; Kaiyou Wang; Gehard Jakob; Jikun Chen; Kangkang Meng; Xiaoguang Xu; Jun Miao; Yong Jiang. Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr0.2Ti0.8O3/Co/Pt Heterostructure[J]. ADVANCED ELECTRONIC MATERIALS,2020,6(6):2000102. |
| APA | Zengyao Ren; Mengxi Wang; Pengfei Liu; Qi Liu; Kaiyou Wang; Gehard Jakob; Jikun Chen; Kangkang Meng; Xiaoguang Xu; Jun Miao; Yong Jiang.(2020).Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr0.2Ti0.8O3/Co/Pt Heterostructure.ADVANCED ELECTRONIC MATERIALS,6(6),2000102. |
| MLA | Zengyao Ren; Mengxi Wang; Pengfei Liu; Qi Liu; Kaiyou Wang; Gehard Jakob; Jikun Chen; Kangkang Meng; Xiaoguang Xu; Jun Miao; Yong Jiang."Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr0.2Ti0.8O3/Co/Pt Heterostructure".ADVANCED ELECTRONIC MATERIALS 6.6(2020):2000102. |
入库方式： OAI收割
来源：半导体研究所
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