Realization of fast switching speed and electronic synapse in Ta/TaOx/AlN/Pt bipolar resistive memory
文献类型：期刊论文
| 作者 | Gang Cao; Xiaobing Yan; Jingjuan Wang; Zhenyu Zhou; Jianzhong Lou; Kaiyou Wang |
| 刊名 | AIP ADVANCES
 |
| 出版日期 | 2020 |
| 卷号 | 10期号:5页码:055312 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30304]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Gang Cao; Xiaobing Yan; Jingjuan Wang; Zhenyu Zhou; Jianzhong Lou; Kaiyou Wang. Realization of fast switching speed and electronic synapse in Ta/TaOx/AlN/Pt bipolar resistive memory[J]. AIP ADVANCES,2020,10(5):055312. |
| APA | Gang Cao; Xiaobing Yan; Jingjuan Wang; Zhenyu Zhou; Jianzhong Lou; Kaiyou Wang.(2020).Realization of fast switching speed and electronic synapse in Ta/TaOx/AlN/Pt bipolar resistive memory.AIP ADVANCES,10(5),055312. |
| MLA | Gang Cao; Xiaobing Yan; Jingjuan Wang; Zhenyu Zhou; Jianzhong Lou; Kaiyou Wang."Realization of fast switching speed and electronic synapse in Ta/TaOx/AlN/Pt bipolar resistive memory".AIP ADVANCES 10.5(2020):055312. |
入库方式： OAI收割
来源：半导体研究所
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