MBE growth of high quality InAsSb thin films on GaAs substrates with GaSb as buffer layers
文献类型：期刊论文
| 作者 | Yong Li; Xiaoming Li; Ruiting Hao; Jie Guo; Yunpeng Wang; Abuduwayiti Aierken; Yu Zhuang; Faran Chang; Suning Cui; Kang Gu; Guoshuai Wei; Xiaole Ma; Guowei Wang; Yingqiang Xu; Zhichuan Niu |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2020 |
| 卷号 | 542页码:125688 |
| 语种 | 英语 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30457]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Yong Li; Xiaoming Li; Ruiting Hao; Jie Guo; Yunpeng Wang; Abuduwayiti Aierken; Yu Zhuang; Faran Chang; Suning Cui; Kang Gu; Guoshuai Wei; Xiaole Ma; Guowei Wang; Yingqiang Xu; Zhichuan Niu. MBE growth of high quality InAsSb thin films on GaAs substrates with GaSb as buffer layers[J]. JOURNAL OF CRYSTAL GROWTH,2020,542:125688. |
| APA | Yong Li; Xiaoming Li; Ruiting Hao; Jie Guo; Yunpeng Wang; Abuduwayiti Aierken; Yu Zhuang; Faran Chang; Suning Cui; Kang Gu; Guoshuai Wei; Xiaole Ma; Guowei Wang; Yingqiang Xu; Zhichuan Niu.(2020).MBE growth of high quality InAsSb thin films on GaAs substrates with GaSb as buffer layers.JOURNAL OF CRYSTAL GROWTH,542,125688. |
| MLA | Yong Li; Xiaoming Li; Ruiting Hao; Jie Guo; Yunpeng Wang; Abuduwayiti Aierken; Yu Zhuang; Faran Chang; Suning Cui; Kang Gu; Guoshuai Wei; Xiaole Ma; Guowei Wang; Yingqiang Xu; Zhichuan Niu."MBE growth of high quality InAsSb thin films on GaAs substrates with GaSb as buffer layers".JOURNAL OF CRYSTAL GROWTH 542(2020):125688. |
入库方式： OAI收割
来源：半导体研究所
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