C2v and D3h symmetric InAs quantum dots on GaAs (001) substrate: Exciton emission and a defect field influence
文献类型：期刊论文
| 作者 | Xiangjun Shang; Ben Ma; Haiqiao Ni; Zesheng Chen; Shulun Li; Yao Chen; Xiaowu He; Xingliang Su; Yujun Shi; Zhichuan Niu |
| 刊名 | AIP ADVANCES
 |
| 出版日期 | 2020 |
| 卷号 | 10期号:8页码:085126 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30428]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Xiangjun Shang; Ben Ma; Haiqiao Ni; Zesheng Chen; Shulun Li; Yao Chen; Xiaowu He; Xingliang Su; Yujun Shi; Zhichuan Niu. C2v and D3h symmetric InAs quantum dots on GaAs (001) substrate: Exciton emission and a defect field influence[J]. AIP ADVANCES,2020,10(8):085126. |
| APA | Xiangjun Shang; Ben Ma; Haiqiao Ni; Zesheng Chen; Shulun Li; Yao Chen; Xiaowu He; Xingliang Su; Yujun Shi; Zhichuan Niu.(2020).C2v and D3h symmetric InAs quantum dots on GaAs (001) substrate: Exciton emission and a defect field influence.AIP ADVANCES,10(8),085126. |
| MLA | Xiangjun Shang; Ben Ma; Haiqiao Ni; Zesheng Chen; Shulun Li; Yao Chen; Xiaowu He; Xingliang Su; Yujun Shi; Zhichuan Niu."C2v and D3h symmetric InAs quantum dots on GaAs (001) substrate: Exciton emission and a defect field influence".AIP ADVANCES 10.8(2020):085126. |
入库方式： OAI收割
来源：半导体研究所
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