Three Subband Occupation of the Two‐Dimensional Electron Gas in Ultrathin Barrier AlN/GaN Heterostructures
文献类型：期刊论文
| 作者 | Liuyun Yang; Xinqiang Wang; Tao Wang; Jingyue Wang; Wenjie Zhang; Patrick Quach; Ping Wang; Fang Liu; Duo Li; Ling Chen; Shangfeng Liu; Jiaqi Wei; Xuelin Yang; Fujun Xu; Ning Tang; Wei Tan; Jian Zhang; Weikun Ge; Xiaosong Wu; Chi Zhang; Bo Shen |
| 刊名 | ADVANCED FUNCTIONAL MATERIALS
 |
| 出版日期 | 2020 |
| 卷号 | 30期号:46页码:2004450 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30124]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Liuyun Yang; Xinqiang Wang; Tao Wang; Jingyue Wang; Wenjie Zhang; Patrick Quach;Ping Wang; Fang Liu; Duo Li; Ling Chen; Shangfeng Liu; Jiaqi Wei; Xuelin Yang;Fujun Xu; Ning Tang; Wei Tan; Jian Zhang; Weikun Ge; Xiaosong Wu; Chi Zhang; Bo Shen. Three Subband Occupation of the Two‐Dimensional Electron Gas in Ultrathin Barrier AlN/GaN Heterostructures[J]. ADVANCED FUNCTIONAL MATERIALS,2020,30(46):2004450. |
| APA | Liuyun Yang; Xinqiang Wang; Tao Wang; Jingyue Wang; Wenjie Zhang; Patrick Quach;Ping Wang; Fang Liu; Duo Li; Ling Chen; Shangfeng Liu; Jiaqi Wei; Xuelin Yang;Fujun Xu; Ning Tang; Wei Tan; Jian Zhang; Weikun Ge; Xiaosong Wu; Chi Zhang; Bo Shen.(2020).Three Subband Occupation of the Two‐Dimensional Electron Gas in Ultrathin Barrier AlN/GaN Heterostructures.ADVANCED FUNCTIONAL MATERIALS,30(46),2004450. |
| MLA | Liuyun Yang; Xinqiang Wang; Tao Wang; Jingyue Wang; Wenjie Zhang; Patrick Quach;Ping Wang; Fang Liu; Duo Li; Ling Chen; Shangfeng Liu; Jiaqi Wei; Xuelin Yang;Fujun Xu; Ning Tang; Wei Tan; Jian Zhang; Weikun Ge; Xiaosong Wu; Chi Zhang; Bo Shen."Three Subband Occupation of the Two‐Dimensional Electron Gas in Ultrathin Barrier AlN/GaN Heterostructures".ADVANCED FUNCTIONAL MATERIALS 30.46(2020):2004450. |
入库方式： OAI收割
来源：半导体研究所
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