The investigations to eliminate the bias dependency of quantum efficiency of InGaAsSb nBn photodetectors for extended short wavelength infrared detection
文献类型：期刊论文
| 作者 | Nong Li; Weiqiang Chen; Danong Zheng; Ju Sun; Qingxuan Jia; Junkai Jiang; Guowei Wanga; Dongwei Jianga; Yingqiang Xua; Zhichuan Niu |
| 刊名 | Infrared Physics & Technology
 |
| 出版日期 | 2020 |
| 卷号 | 111页码:103461 |
| 语种 | 英语 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30004]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Nong Li; Weiqiang Chen; Danong Zheng; Ju Sun; Qingxuan Jia; Junkai Jiang; Guowei Wanga; Dongwei Jianga; Yingqiang Xua; Zhichuan Niu. The investigations to eliminate the bias dependency of quantum efficiency of InGaAsSb nBn photodetectors for extended short wavelength infrared detection[J]. Infrared Physics & Technology,2020,111:103461. |
| APA | Nong Li; Weiqiang Chen; Danong Zheng; Ju Sun; Qingxuan Jia; Junkai Jiang; Guowei Wanga; Dongwei Jianga; Yingqiang Xua; Zhichuan Niu.(2020).The investigations to eliminate the bias dependency of quantum efficiency of InGaAsSb nBn photodetectors for extended short wavelength infrared detection.Infrared Physics & Technology,111,103461. |
| MLA | Nong Li; Weiqiang Chen; Danong Zheng; Ju Sun; Qingxuan Jia; Junkai Jiang; Guowei Wanga; Dongwei Jianga; Yingqiang Xua; Zhichuan Niu."The investigations to eliminate the bias dependency of quantum efficiency of InGaAsSb nBn photodetectors for extended short wavelength infrared detection".Infrared Physics & Technology 111(2020):103461. |
入库方式： OAI收割
来源：半导体研究所
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