Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers
文献类型：期刊论文
| 作者 | Yuan Ye; Su Xiang-Bin; Yang Cheng-ao; Zhang Yi; Shang Jin-Ming; Xie Sheng-Wen; Zhang Yu; Ni Hai-Qiao; Xu Ying-Qiang; Nil Zhi-Chuan |
| 刊名 | J. Infrared Millim. Waves
 |
| 出版日期 | 2020 |
| 卷号 | 39期号:6页码:667~670 |
| 语种 | 英语 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29973]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Yuan Ye;Su Xiang-Bin;Yang Cheng-ao;Zhang Yi;Shang Jin-Ming;Xie Sheng-Wen;Zhang Yu;Ni Hai-Qiao;Xu Ying-Qiang;Nil Zhi-Chuan. Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers[J]. J. Infrared Millim. Waves,2020,39(6):667~670. |
| APA | Yuan Ye;Su Xiang-Bin;Yang Cheng-ao;Zhang Yi;Shang Jin-Ming;Xie Sheng-Wen;Zhang Yu;Ni Hai-Qiao;Xu Ying-Qiang;Nil Zhi-Chuan.(2020).Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers.J. Infrared Millim. Waves,39(6),667~670. |
| MLA | Yuan Ye;Su Xiang-Bin;Yang Cheng-ao;Zhang Yi;Shang Jin-Ming;Xie Sheng-Wen;Zhang Yu;Ni Hai-Qiao;Xu Ying-Qiang;Nil Zhi-Chuan."Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers".J. Infrared Millim. Waves 39.6(2020):667~670. |
入库方式： OAI收割
来源：半导体研究所
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