Insight into the interatomic competitive mechanism for interfacial stability of room temperature liquid GaInSn/Cu electrode
文献类型:期刊论文
作者 | Gao, Zhaoqing1; Chen, Yinbo2,3; Dong, Chong1; Chen, Fei1; Huang, Mingliang1; Ma, Haitao1; Wang, Yunpeng1 |
刊名 | MATERIALS CHEMISTRY AND PHYSICS |
出版日期 | 2021-09-15 |
卷号 | 270页码:14 |
ISSN号 | 0254-0584 |
关键词 | Liquid GaInSn alloys Interfacial stability Interatomic affinity Competitive reactive mechanism Gibbs free energy change |
DOI | 10.1016/j.matchemphys.2021.124809 |
通讯作者 | Wang, Yunpeng(yunpengw@dlut.edu.cn) |
英文摘要 | Room temperature Ga-based alloys have received more and more attentions due to their unique advantages in these applications of stretchable and wearable electronics. In this paper, the interfacial stability of liquid GaInSn/ Cu interface was systematically investigated. From the perspective of crystallography, the orientation relationship between the nucleation and growth of intermetallic compounds and Cu substrate are discussed according to plane-on-plane matching model and edge-to-edge matching model. The required standard formation enthalpy and bond enthalpy of as-formed intermetallic compounds are estimated based on the elemental condensed bond enthalpy and crystal cluster theory. For the ternary GaInSn system, the competitive reactive mechanism between different reactive atomic pairs was revealed and discussed from the thermodynamic view, which verified that the rationality of the formed intermetallic compounds only consisting of Cu and Ga. Besides, we confirmed that the wetting behavior of GaInSn on Cu substrate was determined by the affinity and close contact probability of different atomic pairs. |
资助项目 | National Key Research and Development Program of China[2017YFA0403804] ; National Natural Science Foundation of China[U1837208] |
WOS研究方向 | Materials Science |
语种 | 英语 |
出版者 | ELSEVIER SCIENCE SA |
WOS记录号 | WOS:000672582000003 |
资助机构 | National Key Research and Development Program of China ; National Natural Science Foundation of China |
源URL | [http://ir.imr.ac.cn/handle/321006/160069] |
专题 | 金属研究所_中国科学院金属研究所 |
通讯作者 | Wang, Yunpeng |
作者单位 | 1.Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116024, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China |
推荐引用方式 GB/T 7714 | Gao, Zhaoqing,Chen, Yinbo,Dong, Chong,et al. Insight into the interatomic competitive mechanism for interfacial stability of room temperature liquid GaInSn/Cu electrode[J]. MATERIALS CHEMISTRY AND PHYSICS,2021,270:14. |
APA | Gao, Zhaoqing.,Chen, Yinbo.,Dong, Chong.,Chen, Fei.,Huang, Mingliang.,...&Wang, Yunpeng.(2021).Insight into the interatomic competitive mechanism for interfacial stability of room temperature liquid GaInSn/Cu electrode.MATERIALS CHEMISTRY AND PHYSICS,270,14. |
MLA | Gao, Zhaoqing,et al."Insight into the interatomic competitive mechanism for interfacial stability of room temperature liquid GaInSn/Cu electrode".MATERIALS CHEMISTRY AND PHYSICS 270(2021):14. |
入库方式: OAI收割
来源:金属研究所
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