中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Insight into the interatomic competitive mechanism for interfacial stability of room temperature liquid GaInSn/Cu electrode

文献类型:期刊论文

作者Gao, Zhaoqing1; Chen, Yinbo2,3; Dong, Chong1; Chen, Fei1; Huang, Mingliang1; Ma, Haitao1; Wang, Yunpeng1
刊名MATERIALS CHEMISTRY AND PHYSICS
出版日期2021-09-15
卷号270页码:14
ISSN号0254-0584
关键词Liquid GaInSn alloys Interfacial stability Interatomic affinity Competitive reactive mechanism Gibbs free energy change
DOI10.1016/j.matchemphys.2021.124809
通讯作者Wang, Yunpeng(yunpengw@dlut.edu.cn)
英文摘要Room temperature Ga-based alloys have received more and more attentions due to their unique advantages in these applications of stretchable and wearable electronics. In this paper, the interfacial stability of liquid GaInSn/ Cu interface was systematically investigated. From the perspective of crystallography, the orientation relationship between the nucleation and growth of intermetallic compounds and Cu substrate are discussed according to plane-on-plane matching model and edge-to-edge matching model. The required standard formation enthalpy and bond enthalpy of as-formed intermetallic compounds are estimated based on the elemental condensed bond enthalpy and crystal cluster theory. For the ternary GaInSn system, the competitive reactive mechanism between different reactive atomic pairs was revealed and discussed from the thermodynamic view, which verified that the rationality of the formed intermetallic compounds only consisting of Cu and Ga. Besides, we confirmed that the wetting behavior of GaInSn on Cu substrate was determined by the affinity and close contact probability of different atomic pairs.
资助项目National Key Research and Development Program of China[2017YFA0403804] ; National Natural Science Foundation of China[U1837208]
WOS研究方向Materials Science
语种英语
出版者ELSEVIER SCIENCE SA
WOS记录号WOS:000672582000003
资助机构National Key Research and Development Program of China ; National Natural Science Foundation of China
源URL[http://ir.imr.ac.cn/handle/321006/160069]  
专题金属研究所_中国科学院金属研究所
通讯作者Wang, Yunpeng
作者单位1.Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116024, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
3.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
推荐引用方式
GB/T 7714
Gao, Zhaoqing,Chen, Yinbo,Dong, Chong,et al. Insight into the interatomic competitive mechanism for interfacial stability of room temperature liquid GaInSn/Cu electrode[J]. MATERIALS CHEMISTRY AND PHYSICS,2021,270:14.
APA Gao, Zhaoqing.,Chen, Yinbo.,Dong, Chong.,Chen, Fei.,Huang, Mingliang.,...&Wang, Yunpeng.(2021).Insight into the interatomic competitive mechanism for interfacial stability of room temperature liquid GaInSn/Cu electrode.MATERIALS CHEMISTRY AND PHYSICS,270,14.
MLA Gao, Zhaoqing,et al."Insight into the interatomic competitive mechanism for interfacial stability of room temperature liquid GaInSn/Cu electrode".MATERIALS CHEMISTRY AND PHYSICS 270(2021):14.

入库方式: OAI收割

来源:金属研究所

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