A piezoelectric quantum spin Hall insulator with Rashba spin splitting in Janus monolayer SrAlGaSe4
文献类型：期刊论文
| 作者 | Guo, San-Dong1; Zhu, Yu-Tong1; Mu, Wen-Qi1; Chen, Xing-Qiu2,3 |
| 刊名 | JOURNAL OF MATERIALS CHEMISTRY C
 |
| 出版日期 | 2021-05-07 |
| 页码 | 9 |
| ISSN号 | 2050-7526 |
| DOI | 10.1039/d1tc01165k |
| 通讯作者 | Guo, San-Dong(sandongyuwang@163.com) |
| 英文摘要 | The realization of multifunctional two-dimensional (2D) materials is fundamentally intriguing, such as the combination of piezoelectricity with a topological insulating phase or ferromagnetism. In this work, a Janus monolayer SrAlGaSe4 is built from the 2D MA(2)Z(4) family with dynamic, mechanical and thermal stabilities, which is piezoelectric due to the lack of inversion symmetry. The unstrained SrAlGaSe4 monolayer is a narrow gap normal insulator (NI) with spin orbital coupling (SOC). However, the NI to topological insulator (TI) phase transition can be induced by biaxial strain, and a piezoelectric quantum spin Hall insulator (PQSHI) can be achieved. More excitingly, the phase transformation point is only about 1.01 tensile strain, and the nontrivial band topology can hold until the considered 1.16 tensile strain. Moreover, Rashba spin splitting in the conduction bands can exist in a PQSHI due to the absence of a horizontal mirror symmetry and the presence of SOC. For monolayer SrAlGaSe4, both in-plane and very weak out-of-plane piezoelectric polarizations can be induced with the application of uniaxial strain. The calculated piezoelectric strain coefficients d(11) and d(31) of monolayer SrAlGaSe4 are -1.865 pm V-1 and -0.068 pm V-1 at 1.06 tensile strain as a representative TI. In fact, many PQSHIs can be realized from the 2D MA(2)Z(4) family. To confirm that, similar to SrAlGaSe4, the coexistence of piezoelectricity and topological orders can be realized by applying strain (about 1.04 tensile strain) in the CaAlGaSe4 monolayer. This study suggests that Janus monolayer SrAlGaSe4 is a pure 2D system for a PQSHI, enabling future studies exploring the interplay between piezoelectricity and topological order, which can lead to novel applications in electronics and spintronics. |
| 资助项目 | Natural Science Basis Research Plan in Shaanxi Province of China[2021JM-456] |
| WOS研究方向 | Materials Science ; Physics |
| 语种 | 英语 |
| 出版者 | ROYAL SOC CHEMISTRY |
| WOS记录号 | WOS:000654511800001 |
| 资助机构 | Natural Science Basis Research Plan in Shaanxi Province of China |
| 源URL | [http://ir.imr.ac.cn/handle/321006/160838]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Guo, San-Dong |
| 作者单位 | 1.Xian Univ Posts & Telecommun, Sch Elect Engn, Xian 710121, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China 3.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Guo, San-Dong,Zhu, Yu-Tong,Mu, Wen-Qi,et al. A piezoelectric quantum spin Hall insulator with Rashba spin splitting in Janus monolayer SrAlGaSe4[J]. JOURNAL OF MATERIALS CHEMISTRY C,2021:9. |
| APA | Guo, San-Dong,Zhu, Yu-Tong,Mu, Wen-Qi,&Chen, Xing-Qiu.(2021).A piezoelectric quantum spin Hall insulator with Rashba spin splitting in Janus monolayer SrAlGaSe4.JOURNAL OF MATERIALS CHEMISTRY C,9. |
| MLA | Guo, San-Dong,et al."A piezoelectric quantum spin Hall insulator with Rashba spin splitting in Janus monolayer SrAlGaSe4".JOURNAL OF MATERIALS CHEMISTRY C (2021):9. |
入库方式： OAI收割
来源：金属研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。