Realizing stability of magnetic response under bending in flexible CoFeMnSi films with a sponge-like Ti3C2 MXene buffer layer
文献类型：期刊论文
| 作者 | Xin, Fangqing2; You, Caiyin2; Fu, Huarui2; Hu, Yifeng3; Ma, Li2; Tian, Na2; Cheng, Zhenxiang4; Wang, Xiaohui1; Dou, Pengwei5; Zhang, Jingyan5 |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2021-04-30 |
| 卷号 | 546页码:8 |
| 关键词 | Flexible magnetic film Property stability Spin gapless semiconductor MXene Ti3C2 Bending |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2021.149167 |
| 通讯作者 | You, Caiyin(caiyinyou@xaut.edu.cn) |
| 英文摘要 | Flexible magnetic films have been widely investigated as a potential sensor to detect the stress or strain induced by bending. Nevertheless, the stable magnetic response is highly required in the case of wearable devices in which the bending-induced sensitivity variation should be minimized. Therefore, it is highly worthwhile to propose an approach to design a flexible magnetic film in need. Here, a flexible magnetic thin film of the potential spin gapless semiconductor CoFeMnSi (CFMS) is fabricated on an aluminum foil (Al foil), which is sensitive to the stress or strain induced under bending; but it was found that inserting a Ti3C2 MXene buffer layer, which acts as a sponge-like behavior, can significantly improve the magnetic response stability inert of the stress or strain. Impressively, the H-c can keep relatively constant under bending and the magnetic hysteresis loops remain unchanged even after repeated bending. Through the finite element calculation, we clarify the working mechanism of stress releasing by the buffer layer owing to the sponge-like elastic behavior. Our work proposes a novel approach to design flexible devices towards in need of tunable or endurable properties, and gives a theoretical instruction of selecting a buffer layer. |
| 资助项目 | National Natural Science Foundation of China[51771145] ; National Natural Science Foundation of China[51625101] ; ISF-NSFC joint research program[51961145305] ; ISF-NSFC joint research program[3373/19] ; Shaanxi Natural Science Basic Research Plan[2020JM-464] |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000620785300002 |
| 出版者 | ELSEVIER |
| 资助机构 | National Natural Science Foundation of China ; ISF-NSFC joint research program ; Shaanxi Natural Science Basic Research Plan |
| 源URL | [http://ir.imr.ac.cn/handle/321006/161144]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | You, Caiyin |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Xian Univ Technol, Sch Mat Sci & Engn, Xian 710048, Peoples R China 3.Xian Univ Technol, Sch Civil Engn & Architecture, Xian 710048, Peoples R China 4.Univ Wollongong, Inst Superconducting & Elect Mat, Wollongong, NSW 2500, Australia 5.Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xin, Fangqing,You, Caiyin,Fu, Huarui,et al. Realizing stability of magnetic response under bending in flexible CoFeMnSi films with a sponge-like Ti3C2 MXene buffer layer[J]. APPLIED SURFACE SCIENCE,2021,546:8. |
| APA | Xin, Fangqing.,You, Caiyin.,Fu, Huarui.,Hu, Yifeng.,Ma, Li.,...&Wang, Shouguo.(2021).Realizing stability of magnetic response under bending in flexible CoFeMnSi films with a sponge-like Ti3C2 MXene buffer layer.APPLIED SURFACE SCIENCE,546,8. |
| MLA | Xin, Fangqing,et al."Realizing stability of magnetic response under bending in flexible CoFeMnSi films with a sponge-like Ti3C2 MXene buffer layer".APPLIED SURFACE SCIENCE 546(2021):8. |
入库方式： OAI收割
来源：金属研究所
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