Doping Concentration Modulation in Vanadium-Doped Monolayer Molybdenum Disulfide for Synaptic Transistors
文献类型：期刊论文
| 作者 | Zou, Jingyun2,3; Cai, Zhengyang2,3; Lai, Yongjue2,3; Tan, Junyang2,3; Zhang, Rongjie2,3; Feng, Simin2,3; Wang, Gang1; Lin, Junhao1; Liu, Bilu2,3; Cheng, Hui-Ming2,3,4 |
| 刊名 | ACS NANO
 |
| 出版日期 | 2021-04-27 |
| 卷号 | 15期号:4页码:7340-7347 |
| 关键词 | 2D materials molybdenum disulfide MoS2 vanadium substitutional doping synaptic transistor |
| ISSN号 | 1936-0851 |
| DOI | 10.1021/acsnano.1c00596 |
| 通讯作者 | Liu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(hmcheng@sz.tsinghua.edu.cn) |
| 英文摘要 | Doping is an effective way to modify the electronic property of two-dimensional (2D) materials and endow them with additional functionalities. However, wide-range control of the doping concentrations in monolayer 2D materials with large-scale uniformity remains challenging. Here, we report in situ chemical vapor deposition growth of vanadium-doped monolayer molybdenum disulfide (MoS2) with widely tunable doping concentrations ranging from 0.3 to 13.1 atom %. The key to regulate the doping concentration lies in the use of appropriate vanadium precursors with different doping abilities, which also generate large-scale uniform doping to MoS2. Artificial synaptic transistors were fabricated using the heavily doped MoS2 as the channel material. Synaptic potentiation, depression, and repetitive learning processes were mimicked by the gate-tunable changes of channel conductance in such transistors with abundant vanadium atoms to trap/detrap electrons. This work develops a feasible method to dope monolayer 2D semiconductors and demonstrates their applications in artificial synaptic transistors. |
| 资助项目 | National Natural Science Foundation of China[51920105002] ; National Natural Science Foundation of China[51991340] ; National Natural Science Foundation of China[51991343] ; National Natural Science Foundation of China[51722206] ; National Natural Science Foundation of China[11974156] ; Youth 1000-Talent Program of China, Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Youth 1000-Talent Program of China, Guangdong Innovative and Entrepreneurial Research Team Program[2019ZT08C044] ; Bureau of Industry and Information Technology of Shenzhen[201901171523] ; Shenzhen Basic Research Project[JCYJ20200109144620815] ; Shenzhen Basic Research Project[JCYJ20200109144616617] ; Shenzhen Basic Research Project[KQTD20190929173815000] ; Presidential fund ; Development and Reform Commission of Shenzhen Municipality |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000645436800119 |
| 出版者 | AMER CHEMICAL SOC |
| 资助机构 | National Natural Science Foundation of China ; Youth 1000-Talent Program of China, Guangdong Innovative and Entrepreneurial Research Team Program ; Bureau of Industry and Information Technology of Shenzhen ; Shenzhen Basic Research Project ; Presidential fund ; Development and Reform Commission of Shenzhen Municipality |
| 源URL | [http://ir.imr.ac.cn/handle/321006/161573]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Liu, Bilu; Cheng, Hui-Ming |
| 作者单位 | 1.Southern Univ Sci & Technol, Dept Phys, SUSTech Core Res Facil, Shenzhen 518055, Peoples R China 2.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Shenzhen Int Grad Sch, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China 3.Tsinghua Univ, Inst Mat Res, Tsinghua Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China 4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zou, Jingyun,Cai, Zhengyang,Lai, Yongjue,et al. Doping Concentration Modulation in Vanadium-Doped Monolayer Molybdenum Disulfide for Synaptic Transistors[J]. ACS NANO,2021,15(4):7340-7347. |
| APA | Zou, Jingyun.,Cai, Zhengyang.,Lai, Yongjue.,Tan, Junyang.,Zhang, Rongjie.,...&Cheng, Hui-Ming.(2021).Doping Concentration Modulation in Vanadium-Doped Monolayer Molybdenum Disulfide for Synaptic Transistors.ACS NANO,15(4),7340-7347. |
| MLA | Zou, Jingyun,et al."Doping Concentration Modulation in Vanadium-Doped Monolayer Molybdenum Disulfide for Synaptic Transistors".ACS NANO 15.4(2021):7340-7347. |
入库方式： OAI收割
来源：金属研究所
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