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Catalyst-Free Growth of Atomically Thin Bi2O2Se Nanoribbons for High-Performance Electronics and Optoelectronics

文献类型：期刊论文

作者Khan, Usman1,2; Tang, Lei1,2; Ding, Baofu1,2; Yuting, Luo1,2; Feng, Simin1,2; Chen, Wenjun1,2; Khan, Muhammad Jahangir1,2; Liu, Bilu1,2; Cheng, Hui-Ming1,2,3
刊名ADVANCED FUNCTIONAL MATERIALS
出版日期2021-04-28
页码7
关键词Bi O-2 Se-2 catalyst‐ free growth chemical vapor deposition field‐ effect transistor monolayer nanoribbons photodetectors
ISSN号1616-301X
DOI10.1002/adfm.202101170
通讯作者Liu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(hmcheng@sz.tsinghua.edu.cn)
英文摘要1D materials have attracted significant research interest due to their unique quantum confinement effects and edge-related properties. Atomically thin 1D nanoribbons are particularly interesting because it is a valuable platform with the physical limits of both thickness and width. Here, a catalyst-free growth method is developed and the growth of Bi2O2Se nanostructures with tunable dimensionality is achieved. Significantly, Bi2O2Se nanoribbons with a thickness down to 0.65 nm, corresponding to a monolayer, are successfully grown for the first time. Electrical and optoelectronic measurements show that Bi2O2Se nanoribbons possess decent performance in terms of mobility, on/off ratio, and photoresponsivity, suggesting their promise for devices. This work not only reports a new method for the growth of atomically thin nanoribbons but also provides a platform to study properties and applications of such nanoribbon materials at a thickness limit.
资助项目National Natural Science Foundation of China[51991340] ; National Natural Science Foundation of China[51920105002] ; National Natural Science Foundation of China[51991343] ; National Natural Science Foundation of China[51950410577] ; Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Bureau of Industry and Information Technology of Shenzhen[201901171523] ; Shenzhen Basic Research Project[JCYJ20200109144620815] ; Shenzhen Basic Research Project[JCYJ20190809180605522] ; Shenzhen Basic Research Project[JCYJ20200109144616617]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
WOS记录号WOS:000644764500001
出版者WILEY-V C H VERLAG GMBH
资助机构National Natural Science Foundation of China ; Guangdong Innovative and Entrepreneurial Research Team Program ; Bureau of Industry and Information Technology of Shenzhen ; Shenzhen Basic Research Project
源URL[http://ir.imr.ac.cn/handle/321006/161975]  
专题金属研究所_中国科学院金属研究所
通讯作者Liu, Bilu; Cheng, Hui-Ming
作者单位1.Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst, Shenzhen Geim Graphene Ctr, Shenzhen 518055, Peoples R China
2.Tsinghua Univ, Tsinghua Shenzhen Int Grad Sch, Inst Mat Res, Shenzhen 518055, Peoples R China
3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
推荐引用方式
GB/T 7714		 Khan, Usman,Tang, Lei,Ding, Baofu,et al. Catalyst-Free Growth of Atomically Thin Bi2O2Se Nanoribbons for High-Performance Electronics and Optoelectronics[J]. ADVANCED FUNCTIONAL MATERIALS,2021:7.
APA Khan, Usman.,Tang, Lei.,Ding, Baofu.,Yuting, Luo.,Feng, Simin.,...&Cheng, Hui-Ming.(2021).Catalyst-Free Growth of Atomically Thin Bi2O2Se Nanoribbons for High-Performance Electronics and Optoelectronics.ADVANCED FUNCTIONAL MATERIALS,7.
MLA Khan, Usman,et al."Catalyst-Free Growth of Atomically Thin Bi2O2Se Nanoribbons for High-Performance Electronics and Optoelectronics".ADVANCED FUNCTIONAL MATERIALS (2021):7.

入库方式： OAI收割

来源：金属研究所

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