Effect of surface oxidation on photoluminescence of silicon vacancy color centers in the nanocrystalline diamond films
文献类型：期刊论文
| 作者 | Yu, Biao1,2; Yang, Bing1; Li, Haining1,2; Lu, Jiaqi1,2; Huang, Nan1; Liu, Lusheng1; Jiang, Xin1,3 |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2021-06-30 |
| 卷号 | 552页码:9 |
| 关键词 | Color centers Photoluminescence Nano-crystalline diamond Surface oxidation |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2021.149475 |
| 通讯作者 | Yang, Bing(byang@imr.ac.cn) ; Jiang, Xin(xjiang@imr.ac.cn) |
| 英文摘要 | The effect of three different surface oxidation approaches (air annealing, acid oxidation and oxygen plasma) on microstructural evolution and silicon vacancy (SiV) photoluminescence (PL) in the nanocrystalline diamond (NCD) films is investigated. All oxidation methods lead to the bonding of oxygen functional groups at diamond surface. The SiV centers exhibit the PL enhancement of about 105-fold in the air-annealed sample, compared with the as-deposited films. Nevertheless, the PL enhancement is about 7-fold and 2-fold in the acid- and plasma-treated samples, respectively. Combination of Raman spectra, HRTEM imaging with cross-sectional oxygen mapping confirms that such different PL behavior originates from the formed different thick oxidation layers. The air oxidation results in a thicker oxidation layer with improved crystallinity than the other two methods. In addition, when the air-annealed films are re-terminated with hydrogen, the SiV PL emission tends to drop remarkably under the same crystallinity. It indicates that hydrogen termination leads to the PL quenching of SiV centers. Therefore, our work reveals that the direct bonding of oxygen to sp(3) carbon or the improvement of diamond crystalline quality plays an effective role in the PL enhancement of SiV centers during the oxidation of hydrogen-terminated NCD particles or films. |
| 资助项目 | National Natural Science Foundation of China[51872294] ; Liaoning Provincial Natural Science Foundation of China[2019-MS-331] |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000639695100001 |
| 出版者 | ELSEVIER |
| 资助机构 | National Natural Science Foundation of China ; Liaoning Provincial Natural Science Foundation of China |
| 源URL | [http://ir.imr.ac.cn/handle/321006/162034]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Yang, Bing; Jiang, Xin |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res IMR, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Dept Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China 3.Univ Siegen, Inst Mat Engn, Paul Bonatz Str 9-11, D-57076 Siegen, Germany |
| 推荐引用方式 GB/T 7714 | Yu, Biao,Yang, Bing,Li, Haining,et al. Effect of surface oxidation on photoluminescence of silicon vacancy color centers in the nanocrystalline diamond films[J]. APPLIED SURFACE SCIENCE,2021,552:9. |
| APA | Yu, Biao.,Yang, Bing.,Li, Haining.,Lu, Jiaqi.,Huang, Nan.,...&Jiang, Xin.(2021).Effect of surface oxidation on photoluminescence of silicon vacancy color centers in the nanocrystalline diamond films.APPLIED SURFACE SCIENCE,552,9. |
| MLA | Yu, Biao,et al."Effect of surface oxidation on photoluminescence of silicon vacancy color centers in the nanocrystalline diamond films".APPLIED SURFACE SCIENCE 552(2021):9. |
入库方式： OAI收割
来源：金属研究所
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