Fabrication of high-conductivity RGO film at a temperature lower than 1500 degrees C by electrical current
文献类型：期刊论文
| 作者 | Lv, Meijuan1,2; Wei, Qinwei1,2; Cao, Shuo1,2; Guo, Jingdong1,2; Ren, Wencai1,2; Cheng, Huiming1,2 |
| 刊名 | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
 |
| 出版日期 | 2021-04-10 |
| 页码 | 10 |
| ISSN号 | 0957-4522 |
| DOI | 10.1007/s10854-021-05797-7 |
| 通讯作者 | Guo, Jingdong(jdguo@imr.ac.cn) |
| 英文摘要 | Fabricating conductive graphene films by assembling graphene oxide (GO) sheets is highly desired for many applications, however a very high temperature around 3000 K is usually required to repair the sp(2) structure for traditional thermal annealing. Here, an electric field assisted Joule heating method was developed to repair the sp(2) structure in GO at a temperature lower than 1500 degrees C. The resulting free-standing graphene film shows a high electrical conductivity (similar to 1840 S/cm) and high C/O ratio (132), both of which are much higher than those of thermally reduced GO films under the same temperature. These findings provide new possibilities for fabricating high-quality graphene films in an energy-efficient and low-cost manner. |
| 资助项目 | National Key R&D Program of China[2020YFA0714900] ; National Natural Science Foundation of China[51971231] |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000638869700006 |
| 出版者 | SPRINGER |
| 资助机构 | National Key R&D Program of China ; National Natural Science Foundation of China |
| 源URL | [http://ir.imr.ac.cn/handle/321006/162472]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Guo, Jingdong |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Lv, Meijuan,Wei, Qinwei,Cao, Shuo,et al. Fabrication of high-conductivity RGO film at a temperature lower than 1500 degrees C by electrical current[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2021:10. |
| APA | Lv, Meijuan,Wei, Qinwei,Cao, Shuo,Guo, Jingdong,Ren, Wencai,&Cheng, Huiming.(2021).Fabrication of high-conductivity RGO film at a temperature lower than 1500 degrees C by electrical current.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,10. |
| MLA | Lv, Meijuan,et al."Fabrication of high-conductivity RGO film at a temperature lower than 1500 degrees C by electrical current".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2021):10. |
入库方式： OAI收割
来源：金属研究所
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