Obtaining ultra-high throwing power in Cu electroplating of flexible printed circuit by fast consumption of a suppressor
文献类型：期刊论文
| 作者 | Wei, Xiang-Fu1,2; Zhu, Qing-Sheng1,2; Guo, Jing-Dong1,2; Shang, Jian-Ku1,2 |
| 刊名 | JOURNAL OF SOLID STATE ELECTROCHEMISTRY
 |
| 出版日期 | 2021-10-05 |
| 页码 | 11 |
| 关键词 | Copper electroplating Throwing power (TP) Flexible printed circuit (FPC) Suppressor |
| ISSN号 | 1432-8488 |
| DOI | 10.1016/j.tsf.2021.138671 |
| 通讯作者 | Zhu, Qing-Sheng(qszhu@imr.ac.cn) |
| 英文摘要 | The high throwing power (TP) value is one of the most important parameters for the Cu electroplating of through-holes in flexible printed circuit (FPC). It was found that an ultra-high TP value could be obtained using a specific suppressor, i.e., iodonitrotetrazolium chloride (INT) in the electrolyte. The ultra-high TP value was attributed to fast-consumption of this suppressor instead of traditional convection-dependence adsorption mechanism. A consumption model was built and simulated to clarify the formation of the increment theta, i.e., the difference of suppressor fractional coverage between the entrance and center of through-holes sidewalls. It revealed that the TP, proportional to the increment theta, was determined by the consumption rate of a suppressor. This simulation results were well consistent with the results of electroplating using INT with different concentration. The electrochemical analysis verified the characteristics of fast consumption of INT due to the reduction reaction. The difference of residual INT between the entrance and center of the plated through-holes confirmed the occurrence of increment theta. These results supported the opinion that the ultra-high TP value was obtained by fast-consumption mechanism of INT suppressor. |
| 资助项目 | National Natural Science Foundation of China (NSFC)[51471180] ; National Natural Science Foundation of China (NSFC)[51971231] ; Project of Improving the Basic Scientific Research Ability of Young and Middle-aged Teachers in Guangxi Universities[2021KY1135] |
| WOS研究方向 | Electrochemistry |
| 语种 | 英语 |
| WOS记录号 | WOS:000703831300001 |
| 出版者 | SPRINGER |
| 资助机构 | National Natural Science Foundation of China (NSFC) ; Project of Improving the Basic Scientific Research Ability of Young and Middle-aged Teachers in Guangxi Universities |
| 源URL | [http://ir.imr.ac.cn/handle/321006/166649]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Zhu, Qing-Sheng |
| 作者单位 | 1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wei, Xiang-Fu,Zhu, Qing-Sheng,Guo, Jing-Dong,et al. Obtaining ultra-high throwing power in Cu electroplating of flexible printed circuit by fast consumption of a suppressor[J]. JOURNAL OF SOLID STATE ELECTROCHEMISTRY,2021:11. |
| APA | Wei, Xiang-Fu,Zhu, Qing-Sheng,Guo, Jing-Dong,&Shang, Jian-Ku.(2021).Obtaining ultra-high throwing power in Cu electroplating of flexible printed circuit by fast consumption of a suppressor.JOURNAL OF SOLID STATE ELECTROCHEMISTRY,11. |
| MLA | Wei, Xiang-Fu,et al."Obtaining ultra-high throwing power in Cu electroplating of flexible printed circuit by fast consumption of a suppressor".JOURNAL OF SOLID STATE ELECTROCHEMISTRY (2021):11. |
入库方式： OAI收割
来源：金属研究所
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