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High-Purity Monochiral Carbon Nanotubes with a 1.2 nm Diameter for High-Performance Field-Effect Transistors

文献类型：期刊论文

作者Li, Yahui2,3,4; Zheng, Miaomiao3,5; Yao, Jian3,5; Gong, Wenbin6; Li, Yijun1; Tang, Jianshi1; Feng, Shun7; Han, Ruyue7; Sui, Qicheng3,4; Qiu, Song2,3
刊名ADVANCED FUNCTIONAL MATERIALS
出版日期2021-10-01
页码8
ISSN号1616-301X
关键词field-effect transistors carbon nanotubes conjugated polymers monochiral
DOI10.1002/adfm.202107119
通讯作者Qiu, Song(sqiu2010@sinano.ac.cn) ; Jin, Hehua(hhjin2008@sinano.ac.cn) ; Sun, Dongming(dmsun@imr.ac.cn) ; Li, Qingwen(qwli2007@sinano.ac.cn)
英文摘要Monochiral single-walled carbon nanotubes (SWCNTs) are promising materials with potential applications in 3D integrated circuits and optoelectronic hybrid circuits. However, the purity and device performance of monochiral SWCNTs are still far lower than expected. Here, the authors demonstrate that specific monochiral SWCNTs can be wrapped by conjugated polymers containing pyridine units, and the supramolecular assemblies show surprising suspension stability even after high-intensity ultracentrifugation. Additionally, two novel methods are developed, namely, enhanced ultracentrifugation (E-UCG) and stepwise extraction processing (STEP), which successfully achieve isolation of (10,8) and (12,5) SWCNTs with respective diameters of 1.24 and 1.2 nm at high monochiral purity (92.3% and 95.6%). Their S-11 absorption and fluorescence emission peaks are both at approximate to 1.5 mu m (optical telecommunications C-band). Both micro- and nanoscale field-effect transistor (FET) devices can be fabricated from the as-isolated (10,8) SWCNTs, and these FETs exhibit excellent electrical performance and a high semiconducting purity of up to 99.94%.
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
出版者WILEY-V C H VERLAG GMBH
WOS记录号WOS:000702457200001
源URL[http://ir.imr.ac.cn/handle/321006/166674]  
专题金属研究所_中国科学院金属研究所
通讯作者Qiu, Song; Jin, Hehua; Sun, Dongming; Li, Qingwen
作者单位1.Tsinghua Univ, Beijing Innovat Ctr Future Chips ICFC, Inst Microelect, 30 Shuangqing Rd, Beijing 100084, Peoples R China
2.Univ Sci & Technol China, Sch Nanotech & Nanobion, 96 Jinzhai Rd, Hefei 230026, Peoples R China
3.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Div Adv Nanomat, 398 Ruoshui Rd, Suzhou 215123, Peoples R China
4.Univ Sci & Technol China, Nano Sci & Technol Inst, 166 Renai Rd, Suzhou 215123, Peoples R China
5.Shanghai Tech Univ, Sch Phys Sci & Technol, 393 Middle Huaxia Rd, Shanghai 201210, Peoples R China
6.Xuzhou Univ Technol, Sch Phys & Energy, Xuzhou 221018, Jiangsu, Peoples R China
7.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China
推荐引用方式
GB/T 7714		 Li, Yahui,Zheng, Miaomiao,Yao, Jian,et al. High-Purity Monochiral Carbon Nanotubes with a 1.2 nm Diameter for High-Performance Field-Effect Transistors[J]. ADVANCED FUNCTIONAL MATERIALS,2021:8.
APA Li, Yahui.,Zheng, Miaomiao.,Yao, Jian.,Gong, Wenbin.,Li, Yijun.,...&Li, Qingwen.(2021).High-Purity Monochiral Carbon Nanotubes with a 1.2 nm Diameter for High-Performance Field-Effect Transistors.ADVANCED FUNCTIONAL MATERIALS,8.
MLA Li, Yahui,et al."High-Purity Monochiral Carbon Nanotubes with a 1.2 nm Diameter for High-Performance Field-Effect Transistors".ADVANCED FUNCTIONAL MATERIALS (2021):8.

入库方式： OAI收割

来源：金属研究所

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