Realization of a non-markov chain in a single 2D mineral RRAM
文献类型：期刊论文
| 作者 | Zhang, Rongjie2,3; Chen, Wenjun2,3; Teng, Changjiu2,3; Liao, Wugang1; Liu, Bilu2,3; Cheng, Hui-Ming2,3,4 |
| 刊名 | SCIENCE BULLETIN
 |
| 出版日期 | 2021-08-30 |
| 卷号 | 66期号:16页码:1634-1640 |
| 关键词 | 2D materials Mica Ion transport RRAM Non-Markov chain |
| ISSN号 | 2095-9273 |
| DOI | 10.1016/j.scib.2021.04.025 |
| 通讯作者 | Liu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(hmcheng@sz.tsinghua.edu.cn) |
| 英文摘要 | The non-Markov process exists widely in thermodymanic process, while it usually requires the packing of many transistors and memories with great system complexity in a traditional device structure to minic such functions. Two-dimensional (2D) material-based resistive random access memory (RRAM) devices have the potential for next-generation computing systems with much-reduced complexity. Here, we achieve a non-Markov chain in an individual RRAM device based on 2D mineral material mica with a vertical metal/mica/metal structure. We find that the potassium ions (K+) in 2D mica gradually move in the direction of the applied electric field, making the initially insulating mica conductive. The accumulation of K+ is changed by an electric field, and the 2D-mica RRAM has both single and double memory windows, a high on/off ratio, decent stability, and repeatability. This is the first time a non-Markov chain process has been established in a single RRAM, in which the movement of K' is dependent on the stimulated volt-age as well as their past states. This work not only uncovers an intrinsic inner ionic conductivity of 2D mica, but also opens the door for the production of such RRAM devices with numerous functions and applications. (C) 2021 Science China Press. Published by Elsevier B.V. and Science China Press. |
| 资助项目 | National Natural Science Foundation of China[51920105002] ; National Natural Science Foundation of China[51991340] ; National Natural Science Foundation of China[51722206] ; National Natural Science Foundation of China[51991343] ; Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Bureau of Industry and Information Technology of Shenzhen[201901171523] ; Shenzhen Basic Research Program[JCYJ20200109144620815] ; Shenzhen Basic Research Program[JCYJ20200109144616617] |
| WOS研究方向 | Science & Technology - Other Topics |
| 语种 | 英语 |
| WOS记录号 | WOS:000686908500010 |
| 出版者 | ELSEVIER |
| 资助机构 | National Natural Science Foundation of China ; Guangdong Innovative and Entrepreneurial Research Team Program ; Bureau of Industry and Information Technology of Shenzhen ; Shenzhen Basic Research Program |
| 源URL | [http://ir.imr.ac.cn/handle/321006/166837]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Liu, Bilu; Cheng, Hui-Ming |
| 作者单位 | 1.Shenzhen Univ, Inst Microscale Optoelect, Shenzhen 518060, Peoples R China 2.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China 3.Tsinghua Univ, Tsinghua Shenzhen Int Grad Sch, Inst Mat Res, Shenzhen 518055, Peoples R China 4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Rongjie,Chen, Wenjun,Teng, Changjiu,et al. Realization of a non-markov chain in a single 2D mineral RRAM[J]. SCIENCE BULLETIN,2021,66(16):1634-1640. |
| APA | Zhang, Rongjie,Chen, Wenjun,Teng, Changjiu,Liao, Wugang,Liu, Bilu,&Cheng, Hui-Ming.(2021).Realization of a non-markov chain in a single 2D mineral RRAM.SCIENCE BULLETIN,66(16),1634-1640. |
| MLA | Zhang, Rongjie,et al."Realization of a non-markov chain in a single 2D mineral RRAM".SCIENCE BULLETIN 66.16(2021):1634-1640. |
入库方式： OAI收割
来源：金属研究所
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