LATTICE DEFORMATION AND IMPURITY LOCATION OF BI IMPLANTED SI INDUCED BY PULSED LASER ANNEALING
文献类型：期刊论文
| 作者 | CAO, DX(曹德新） ; CHU, TC ; ZHOU, ZY ; DAI, RZ ; HU, JZ ; DEUTCH, BI |
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH
 |
| 出版日期 | 1981 |
| 卷号 | 191期号:41277 |
| ISSN号 | 0029-554X |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-11 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/12955]  |
| 专题 | 上海应用物理研究所_中科院上海原子核所2003年前 |
| 推荐引用方式 GB/T 7714 | CAO, DX,CHU, TC,ZHOU, ZY,et al. LATTICE DEFORMATION AND IMPURITY LOCATION OF BI IMPLANTED SI INDUCED BY PULSED LASER ANNEALING[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH,1981,191(41277). |
| APA | CAO, DX,CHU, TC,ZHOU, ZY,DAI, RZ,HU, JZ,&DEUTCH, BI.(1981).LATTICE DEFORMATION AND IMPURITY LOCATION OF BI IMPLANTED SI INDUCED BY PULSED LASER ANNEALING.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH,191(41277). |
| MLA | CAO, DX,et al."LATTICE DEFORMATION AND IMPURITY LOCATION OF BI IMPLANTED SI INDUCED BY PULSED LASER ANNEALING".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH 191.41277(1981). |
入库方式： OAI收割
来源：上海应用物理研究所
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