中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Excitonic optical absorption in semiconductors under intense terahertz radiation

文献类型:期刊论文

作者Zhang Tong-Yi; Zhao Wei
刊名chinese physics b
出版日期2008-11-01
卷号17期号:11页码:4285-4291
关键词exciton optical absorption terahertz radiation dynamical Franz-Keldysh effect
ISSN号1674-1056
合作状况其它
英文摘要the excitonic optical absorption of gaas bulk semiconductors under intense terahertz (thz) radiation is investigated numerically. the method of solving initial-value problems, combined with the perfect matched layer technique, is used to calculate the optical susceptibility. in the presence of a driving thz field, in addition to the usual exciton peaks, 2p replica of the dark 2p exciton and even-thz-photon-sidebands of the main exciton resonance emerge in the continuum above the band edge and below the main exciton resonance. moreover, to understand the shift of the position of the main exciton peak under intense thz radiation, it is necessary to take into consideration both the dynamical franz-keldysh effect and ac stark effect simultaneously. for moderate frequency fields, the main exciton peak decreases and broadens due to the field-induced ionization of the excitons with thz field increasing. however, for high frequency thz fields, the characteristics of the exciton recur even under very strong thz fields, which accords with the recent experimental results qualitatively.
WOS标题词science & technology ; physical sciences
学科主题数理科学和化学
类目[WOS]physics, multidisciplinary
研究领域[WOS]physics
关键词[WOS]quantum-well structures ; numerical-calculation ; magnetic-field ; electric-field ; band-gap ; electroabsorption ; magnetoexcitons ; edge
收录类别SCI ; EI
资助信息∗project supported by the national natural science foundation of china (grant no 60777017), the national basic research
语种英语
WOS记录号WOS:000261206700054
公开日期2010-01-13
源URL[http://ir.opt.ac.cn/handle/181661/7975]  
专题西安光学精密机械研究所_瞬态光学技术国家重点实验室
作者单位Chinese Acad Sci, Xian Inst Opt & Precis Mech, State Key Lab Transient Opt & Photon, Xian 710119, Peoples R China
推荐引用方式
GB/T 7714
Zhang Tong-Yi,Zhao Wei. Excitonic optical absorption in semiconductors under intense terahertz radiation[J]. chinese physics b,2008,17(11):4285-4291.
APA Zhang Tong-Yi,&Zhao Wei.(2008).Excitonic optical absorption in semiconductors under intense terahertz radiation.chinese physics b,17(11),4285-4291.
MLA Zhang Tong-Yi,et al."Excitonic optical absorption in semiconductors under intense terahertz radiation".chinese physics b 17.11(2008):4285-4291.

入库方式: OAI收割

来源:西安光学精密机械研究所

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