Role of defect electronic states in the ferromagnetism in graphite
文献类型：期刊论文
| 作者 | He, Zhoutong（贺周同） ; Yang, Xinmei ; Xia, Huihao（夏汇浩） ; Regier, T. Z. ; Chevrier, D. K. ; Zhou, Xingtai（周兴泰） ; Sham, T. K. |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2012 |
| 卷号 | 85期号:14 |
| ISSN号 | 1098-0121 |
| 英文摘要 | The mechanism of ferromagnetism in carbon-based materials, which contain only s and p electrons in contrast to traditional ferromagnets based on 3d or 4f electrons, is important but unclear. Here, by means of near-edge x-ray-absorption fine-structure (NEXAFS) and bulk magnetization measurements, we demonstrate that the origin of ferromagnetism in C-12(+) ion implanted highly oriented pyrolytic graphite (HOPG) is closely correlated with the defect electronic states near the Fermi level. The angle-dependent NEXAFS spectra imply that these defect-induced electronic states are extended on the graphite basal plane. We attribute the origin of electronic states to the vacancy defects created under C-12(+) ion implantation. The intensity of the observed ferromagnetism in HOPG is sensitive to the defect density, and the narrow implantation dosage window that produces ferromagnetism is optimized. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000302610900006 |
| 公开日期 | 2013-09-11 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/12911]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 推荐引用方式 GB/T 7714 | He, Zhoutong,Yang, Xinmei,Xia, Huihao,et al. Role of defect electronic states in the ferromagnetism in graphite[J]. PHYSICAL REVIEW B,2012,85(14). |
| APA | He, Zhoutong.,Yang, Xinmei.,Xia, Huihao.,Regier, T. Z..,Chevrier, D. K..,...&Sham, T. K..(2012).Role of defect electronic states in the ferromagnetism in graphite.PHYSICAL REVIEW B,85(14). |
| MLA | He, Zhoutong,et al."Role of defect electronic states in the ferromagnetism in graphite".PHYSICAL REVIEW B 85.14(2012). |
入库方式： OAI收割
来源：上海应用物理研究所
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