中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Anomalous electron collimation in HgTe quantum wells with inverted band structure

文献类型:期刊论文

;
作者Zou, Y. L.; Zhang, L. B.; Song, J. T.
刊名journal of physics-condensed matter ; JOURNAL OF PHYSICS-CONDENSED MATTER
出版日期2013 ; 2013
卷号25期号:7页码:075801
学科主题半导体物理 ; 半导体物理
收录类别SCI
语种英语 ; 英语
公开日期2013-09-22 ; 2013-09-22
源URL[http://ir.semi.ac.cn/handle/172111/24369]  
专题半导体研究所_半导体超晶格国家重点实验室
推荐引用方式
GB/T 7714
Zou, Y. L.,Zhang, L. B.,Song, J. T.. Anomalous electron collimation in HgTe quantum wells with inverted band structure, Anomalous electron collimation in HgTe quantum wells with inverted band structure[J]. journal of physics-condensed matter, JOURNAL OF PHYSICS-CONDENSED MATTER,2013, 2013,25, 25(7):075801, 075801.
APA Zou, Y. L.,Zhang, L. B.,&Song, J. T..(2013).Anomalous electron collimation in HgTe quantum wells with inverted band structure.journal of physics-condensed matter,25(7),075801.
MLA Zou, Y. L.,et al."Anomalous electron collimation in HgTe quantum wells with inverted band structure".journal of physics-condensed matter 25.7(2013):075801.

入库方式: OAI收割

来源:半导体研究所

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