Highly Textured Assembly of Engineered Si Nanowires for Artificial Synapses Model
文献类型：期刊论文
| 作者 | Duan, Chunyang3; Zhao, Dong3; Wang, Xiang3; Ren, Bei1,3; Li, Mengqi3; Zhao, Zenghua3; Liu, Hongying1; Sham, Tsun-Kong2,4; Wang, Yu3 |
| 刊名 | ACS APPLIED ELECTRONIC MATERIALS
 |
| 出版日期 | 2021-03-23 |
| 卷号 | 3期号:3页码:1375-1383 |
| 关键词 | Si nanowires HiGee technology assembly graphene quantum dots artificial synapses |
| DOI | 10.1021/acsaelm.1c00004 |
| 英文摘要 | Uniformly aligned silicon nanowire (SiNW) arrays are promising building blocks for a range of photoelectrical and sensing devices attributable to their unique optical, electrical, structural, mechanical, and thermal properties. In particular, the large-area and high-density assembled planar SiNWs arrays with a horizontal orientation can have critical applications in nanoelectronics. However, the fabrication of textured silicon nanowires with high throughput also faces the challenges of cost, processing cycle, and precision. Herein we demonstrate a high throughput fabrication and horizontal texture alignment stratagem for wafer-scale high-density SiNWs, which thereby is employed in ionic-gel electrolyte gated pseudodiode transistor for artificial synapses. Integration hypergravity (HiGee) into controllable metal-assisted chemical etching process enables the vertically aligned SiNWs thus obtained with unprecedented uniformity, high aspect ratio, and very smooth surface. Highly horizontal textured SiNWs with good semiconductor character were obtained from a bio-inspired in situ assembled method by mechanical shear force induced controlled breakage using graphene quantum dots (GQDs) as a solid lubricant. Finally, the textured SiNW channel-based pseudodiode transistor exhibits excellent activity-dependent inhibitory and excitatory synaptic behaviors with good operational performance mimicked from biological synapse system. The proposed artificial synapse may find potential applications in energetic effective neuromorphic platforms. The fabrication strategy and the highly textured SiNW arrays also hold great promise for other nanostructure building blocks. |
| 资助项目 | National Natural Science Foundation of China[21875256] ; National Natural Science Foundation of China[21473209] ; National Natural Science Foundation of China[51503210] ; Key Laboratory of Photochemical Conversion and Optoelectronic Materials, TIPC, CAS[PCOM202013] |
| WOS研究方向 | Engineering ; Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000634556600038 |
| 出版者 | AMER CHEMICAL SOC |
| 资助机构 | National Natural Science Foundation of China ; Key Laboratory of Photochemical Conversion and Optoelectronic Materials, TIPC, CAS |
| 源URL | [http://ir.ipe.ac.cn/handle/122111/48280]  |
| 专题 | 中国科学院过程工程研究所 |
| 通讯作者 | Wang, Yu |
| 作者单位 | 1.China Univ Min & Technol Beijing, Sch Chem & Environm Engn, Beijing 100083, Peoples R China 2.Univ Western Ontario, Soochow Western Ctr Synchrotron Radiat Res, London, ON N6A 5B7, Canada 3.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China 4.Univ Western Ontario, Dept Chem, London, ON N6A 5B7, Canada |
| 推荐引用方式 GB/T 7714 | Duan, Chunyang,Zhao, Dong,Wang, Xiang,et al. Highly Textured Assembly of Engineered Si Nanowires for Artificial Synapses Model[J]. ACS APPLIED ELECTRONIC MATERIALS,2021,3(3):1375-1383. |
| APA | Duan, Chunyang.,Zhao, Dong.,Wang, Xiang.,Ren, Bei.,Li, Mengqi.,...&Wang, Yu.(2021).Highly Textured Assembly of Engineered Si Nanowires for Artificial Synapses Model.ACS APPLIED ELECTRONIC MATERIALS,3(3),1375-1383. |
| MLA | Duan, Chunyang,et al."Highly Textured Assembly of Engineered Si Nanowires for Artificial Synapses Model".ACS APPLIED ELECTRONIC MATERIALS 3.3(2021):1375-1383. |
入库方式： OAI收割
来源：过程工程研究所
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