The Influence of Anode Trench Geometries on Electrical Properties of AlGaN/GaN Schottky Barrier Diodes
文献类型：期刊论文
| 作者 | Xiuxia Yang; Zhe Cheng; Zhiguo Yu; Lifang Jia; Lian Zhang; Yun Zhang |
| 刊名 | ELECTRONICS
 |
| 出版日期 | 2020 |
| 卷号 | 9期号:2页码:282 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30539]  |
| 专题 | 半导体研究所_固态光电信息技术实验室 |
| 推荐引用方式 GB/T 7714 | Xiuxia Yang;Zhe Cheng;Zhiguo Yu;Lifang Jia;Lian Zhang;Yun Zhang;. The Influence of Anode Trench Geometries on Electrical Properties of AlGaN/GaN Schottky Barrier Diodes[J]. ELECTRONICS,2020,9(2):282. |
| APA | Xiuxia Yang;Zhe Cheng;Zhiguo Yu;Lifang Jia;Lian Zhang;Yun Zhang;.(2020).The Influence of Anode Trench Geometries on Electrical Properties of AlGaN/GaN Schottky Barrier Diodes.ELECTRONICS,9(2),282. |
| MLA | Xiuxia Yang;Zhe Cheng;Zhiguo Yu;Lifang Jia;Lian Zhang;Yun Zhang;."The Influence of Anode Trench Geometries on Electrical Properties of AlGaN/GaN Schottky Barrier Diodes".ELECTRONICS 9.2(2020):282. |
入库方式： OAI收割
来源：半导体研究所
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