Defect appearance on 4H-SiC homoepitaxial layers via molten KOH etching
文献类型:期刊论文
作者 | X.F. Liu; G.G. Yan; L. Sang; Y.X. Niu; Y.W. He; Z.W. Shen; Z.X. Wen; J. Chen; W.S. Zhao; L. Wang; M. Guan; F. Zhang; G.S. Sun; Y.P. Zeng |
刊名 | JOURNAL OF CRYSTAL GROWTH |
出版日期 | 2020 |
卷号 | 531页码:125359 |
源URL | [http://ir.semi.ac.cn/handle/172111/30543] |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | X.F. Liu; G.G. Yan; L. Sang; Y.X. Niu; Y.W. He; Z.W. Shen; Z.X. Wen; J. Chen; W.S. Zhao; L. Wang; M. Guan; F. Zhang; G.S. Sun; Y.P. Zeng. Defect appearance on 4H-SiC homoepitaxial layers via molten KOH etching[J]. JOURNAL OF CRYSTAL GROWTH,2020,531:125359. |
APA | X.F. Liu; G.G. Yan; L. Sang; Y.X. Niu; Y.W. He; Z.W. Shen; Z.X. Wen; J. Chen; W.S. Zhao; L. Wang; M. Guan; F. Zhang; G.S. Sun; Y.P. Zeng.(2020).Defect appearance on 4H-SiC homoepitaxial layers via molten KOH etching.JOURNAL OF CRYSTAL GROWTH,531,125359. |
MLA | X.F. Liu; G.G. Yan; L. Sang; Y.X. Niu; Y.W. He; Z.W. Shen; Z.X. Wen; J. Chen; W.S. Zhao; L. Wang; M. Guan; F. Zhang; G.S. Sun; Y.P. Zeng."Defect appearance on 4H-SiC homoepitaxial layers via molten KOH etching".JOURNAL OF CRYSTAL GROWTH 531(2020):125359. |
入库方式: OAI收割
来源:半导体研究所
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