Effect of C/Si ratio on growth of 4H-SiC epitaxial layers on on-axis and 4° off-axis substrates
文献类型：期刊论文
| 作者 | G.G. Yan; Y.W. He; Z.W. Shen; Y.X. Cui; J.T. Li; W.S. Zhao; L. Wang; X.F. Liu; F. Zhang; G.S. Sun; Y.P. Zeng |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2020 |
| 卷号 | 531页码:125362 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30544]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | G.G. Yan; Y.W. He; Z.W. Shen; Y.X. Cui; J.T. Li; W.S. Zhao; L. Wang; X.F. Liu; F. Zhang; G.S. Sun; Y.P. Zeng. Effect of C/Si ratio on growth of 4H-SiC epitaxial layers on on-axis and 4° off-axis substrates[J]. JOURNAL OF CRYSTAL GROWTH,2020,531:125362. |
| APA | G.G. Yan; Y.W. He; Z.W. Shen; Y.X. Cui; J.T. Li; W.S. Zhao; L. Wang; X.F. Liu; F. Zhang; G.S. Sun; Y.P. Zeng.(2020).Effect of C/Si ratio on growth of 4H-SiC epitaxial layers on on-axis and 4° off-axis substrates.JOURNAL OF CRYSTAL GROWTH,531,125362. |
| MLA | G.G. Yan; Y.W. He; Z.W. Shen; Y.X. Cui; J.T. Li; W.S. Zhao; L. Wang; X.F. Liu; F. Zhang; G.S. Sun; Y.P. Zeng."Effect of C/Si ratio on growth of 4H-SiC epitaxial layers on on-axis and 4° off-axis substrates".JOURNAL OF CRYSTAL GROWTH 531(2020):125362. |
入库方式： OAI收割
来源：半导体研究所
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