中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Phase Change Behavior and Multi-Level Storage for V2O5 Thin Film in Phase-Change Memory Application

文献类型:期刊论文

作者Yongkang Xu;  Yifeng Hu;  Song Sun;   Tianshu Lai
刊名ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
出版日期2020
卷号9期号:7页码:073001
源URL[http://ir.semi.ac.cn/handle/172111/30549]  
专题半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式
GB/T 7714
Yongkang Xu;Yifeng Hu;Song Sun; Tianshu Lai. Phase Change Behavior and Multi-Level Storage for V2O5 Thin Film in Phase-Change Memory Application[J]. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY,2020,9(7):073001.
APA Yongkang Xu;Yifeng Hu;Song Sun; Tianshu Lai.(2020).Phase Change Behavior and Multi-Level Storage for V2O5 Thin Film in Phase-Change Memory Application.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY,9(7),073001.
MLA Yongkang Xu;Yifeng Hu;Song Sun; Tianshu Lai."Phase Change Behavior and Multi-Level Storage for V2O5 Thin Film in Phase-Change Memory Application".ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 9.7(2020):073001.

入库方式: OAI收割

来源:半导体研究所

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