Enhanced performance of InAs/GaAs quantum dot superluminescent diodes by direct Si-doping
文献类型：期刊论文
| 作者 | Hong Wang; Zun-Ren Lv; Zhong-Kai Zhang; Yun-Yun Ding; Hao-Miao Wang; Xiao-Guang Yang; Tao Yang |
| 刊名 | AIP ADVANCES
 |
| 出版日期 | 2020 |
| 卷号 | 10期号:4页码:045202 |
| 公开日期 | 2020 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30569]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Hong Wang; Zun-Ren Lv; Zhong-Kai Zhang; Yun-Yun Ding; Hao-Miao Wang; Xiao-Guang Yang; Tao Yang. Enhanced performance of InAs/GaAs quantum dot superluminescent diodes by direct Si-doping[J]. AIP ADVANCES,2020,10(4):045202. |
| APA | Hong Wang; Zun-Ren Lv; Zhong-Kai Zhang; Yun-Yun Ding; Hao-Miao Wang; Xiao-Guang Yang; Tao Yang.(2020).Enhanced performance of InAs/GaAs quantum dot superluminescent diodes by direct Si-doping.AIP ADVANCES,10(4),045202. |
| MLA | Hong Wang; Zun-Ren Lv; Zhong-Kai Zhang; Yun-Yun Ding; Hao-Miao Wang; Xiao-Guang Yang; Tao Yang."Enhanced performance of InAs/GaAs quantum dot superluminescent diodes by direct Si-doping".AIP ADVANCES 10.4(2020):045202. |
入库方式： OAI收割
来源：半导体研究所
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