A Comparison of Defects Between InAs Single Crystals Grown by LEC and VGF Methods
文献类型：期刊论文
| 作者 | Guiying Shen; Youwen Zhao; Jing Sun; Jingming Liu; Zhiyuan Dong; Hui Xie; Fenghua Wang ; Jun Yang |
| 刊名 | JOURNAL OF ELECTRONIC MATERIALS
 |
| 出版日期 | 2020 |
| 卷号 | 49期号:9页码:5104-5109 |
| 语种 | 英语 |
| 公开日期 | 2020 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30579]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Guiying Shen; Youwen Zhao; Jing Sun; Jingming Liu; Zhiyuan Dong; Hui Xie; Fenghua Wang ; Jun Yang. A Comparison of Defects Between InAs Single Crystals Grown by LEC and VGF Methods[J]. JOURNAL OF ELECTRONIC MATERIALS,2020,49(9):5104-5109. |
| APA | Guiying Shen; Youwen Zhao; Jing Sun; Jingming Liu; Zhiyuan Dong; Hui Xie; Fenghua Wang ; Jun Yang.(2020).A Comparison of Defects Between InAs Single Crystals Grown by LEC and VGF Methods.JOURNAL OF ELECTRONIC MATERIALS,49(9),5104-5109. |
| MLA | Guiying Shen; Youwen Zhao; Jing Sun; Jingming Liu; Zhiyuan Dong; Hui Xie; Fenghua Wang ; Jun Yang."A Comparison of Defects Between InAs Single Crystals Grown by LEC and VGF Methods".JOURNAL OF ELECTRONIC MATERIALS 49.9(2020):5104-5109. |
入库方式： OAI收割
来源：半导体研究所
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