VGF growth of high quality InAs single crystals with low dislocation density
文献类型：期刊论文
| 作者 | Jun Yang; Wei Lu; Manlong Duan; Hui Xie; Guiying Shen; Jingmin Liu; Zhiyuan Dong; Youwen Zhao |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2020 |
| 卷号 | 531页码:125350 |
| 语种 | 英语 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30633]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Jun Yang; Wei Lu; Manlong Duan; Hui Xie; Guiying Shen; Jingmin Liu; Zhiyuan Dong;Youwen Zhao. VGF growth of high quality InAs single crystals with low dislocation density[J]. JOURNAL OF CRYSTAL GROWTH,2020,531:125350. |
| APA | Jun Yang; Wei Lu; Manlong Duan; Hui Xie; Guiying Shen; Jingmin Liu; Zhiyuan Dong;Youwen Zhao.(2020).VGF growth of high quality InAs single crystals with low dislocation density.JOURNAL OF CRYSTAL GROWTH,531,125350. |
| MLA | Jun Yang; Wei Lu; Manlong Duan; Hui Xie; Guiying Shen; Jingmin Liu; Zhiyuan Dong;Youwen Zhao."VGF growth of high quality InAs single crystals with low dislocation density".JOURNAL OF CRYSTAL GROWTH 531(2020):125350. |
入库方式： OAI收割
来源：半导体研究所
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