Investigation of the distribution of deep levels in 4H-SiC epitaxial wafer by DLTS with the method of decussate sampling
文献类型：期刊论文
| 作者 | Yawei He ; Guoguo Yan ; Zhanwei Shen; Wanshun Zhao ; Lei Wang ; Xingfang Liu ; Guosheng Sun; Feng Zhang ; Yiping Zeng |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2020 |
| 卷号 | 531页码:125352 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30693]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Yawei He ;Guoguo Yan ; Zhanwei Shen; Wanshun Zhao ; Lei Wang ; Xingfang Liu ;Guosheng Sun; Feng Zhang ; Yiping Zeng. Investigation of the distribution of deep levels in 4H-SiC epitaxial wafer by DLTS with the method of decussate sampling[J]. JOURNAL OF CRYSTAL GROWTH,2020,531:125352. |
| APA | Yawei He ;Guoguo Yan ; Zhanwei Shen; Wanshun Zhao ; Lei Wang ; Xingfang Liu ;Guosheng Sun; Feng Zhang ; Yiping Zeng.(2020).Investigation of the distribution of deep levels in 4H-SiC epitaxial wafer by DLTS with the method of decussate sampling.JOURNAL OF CRYSTAL GROWTH,531,125352. |
| MLA | Yawei He ;Guoguo Yan ; Zhanwei Shen; Wanshun Zhao ; Lei Wang ; Xingfang Liu ;Guosheng Sun; Feng Zhang ; Yiping Zeng."Investigation of the distribution of deep levels in 4H-SiC epitaxial wafer by DLTS with the method of decussate sampling".JOURNAL OF CRYSTAL GROWTH 531(2020):125352. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。