High-pressure synthesis, growth and characterization of large-size BaGa4Se7 crystals
文献类型：期刊论文
| 作者 | Li, Chunxiao1,2,3; Li, Zhuang1,2,3; Sun, Mengran1,2,3; Huang, Changbao4 ; Yao, Jiyong2,3
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| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2022 |
| 卷号 | 577 |
| ISSN号 | 0022-0248 |
| 关键词 | A2. Bridgman technique A2. Single crystal growth B2. Nonlinear optic materials |
| DOI | 10.1016/j.jcrysgro.2021.126405 |
| 通讯作者 | Yao, Jiyong(jyao@mail.ipc.ac.cn) |
| 英文摘要 | BaGa4Se7 (BGSe), as a promising new infrared nonlinear optical (IR NLO) crystal, has been widely studied in recent years due to its outstanding overall properties and IR laser output performance. In this paper, the synthesis method of polycrystalline sample and the temperature field used in crystal growth of BGSe were improved. More than 200 g BGSe polycrystalline sample can be synthesized by high pressure synthesis in just 2 days. The crystal growth temperature field can be designed with the use of COMSOL Multiphysics (TM) simulation software, and the experimental results fit well with the simulation results. A high-quality crystal with dimensions up to Phi 40 mm x 180 mm was grown successfully by the Bridgman-Stockbarger method. The surface laser damage threshold was measured to be 7.075 J/cm(2) (peak on-axial fluence) using a 1.064 mu m laser under conditions of 5 ns pulse width, 1 Hz frequency, and 0.12 mm spot size. The absorption coefficient was 0.017 cm(-1)@4 mu m for an uncoated sample. |
| WOS关键词 | INDUCED DAMAGE THRESHOLD ; NONLINEAR CRYSTALS ; SINGLE-CRYSTALS ; HIGH-POWER ; ZNGEP2 ; BAGA2GESE6 |
| 资助项目 | National Natural Science Foundation of China[51890862] |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| 语种 | 英语 |
| 出版者 | ELSEVIER |
| WOS记录号 | WOS:000718377900005 |
| 资助机构 | National Natural Science Foundation of China |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/126676]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 通讯作者 | Yao, Jiyong |
| 作者单位 | 1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 2.Chinese Acad Sci, Beijing Ctr Crystal Res & Dev, Tech Inst Phys & Chem, Key Lab Funct Crystals & Laser Technol, Beijing 100190, Peoples R China 3.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China 4.Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Anhui Prov Key Lab Photon Devices & Mat, Hefei 230031, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Chunxiao,Li, Zhuang,Sun, Mengran,et al. High-pressure synthesis, growth and characterization of large-size BaGa4Se7 crystals[J]. JOURNAL OF CRYSTAL GROWTH,2022,577. |
| APA | Li, Chunxiao,Li, Zhuang,Sun, Mengran,Huang, Changbao,&Yao, Jiyong.(2022).High-pressure synthesis, growth and characterization of large-size BaGa4Se7 crystals.JOURNAL OF CRYSTAL GROWTH,577. |
| MLA | Li, Chunxiao,et al."High-pressure synthesis, growth and characterization of large-size BaGa4Se7 crystals".JOURNAL OF CRYSTAL GROWTH 577(2022). |
入库方式： OAI收割
来源：合肥物质科学研究院
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