Optimization of the epitaxial structure of low-loss 885nm high-power laser diodes
文献类型：会议论文
| 作者 | Wu, Shun-Hua1,2; Li, Te1; Wang, Dan1; Yu, Xue-Cheng1; Wang, Zhen-Fu1 ; Liu, Guo-Jun2
|
| 出版日期 | 2021 |
| 会议日期 | 2021-06-03 |
| 会议地点 | Shanghai, China |
| 关键词 | 885nm low loss asymmetric waveguide high power high power conversion efficiency |
| 卷号 | 11907 |
| DOI | 10.1117/12.2602879 |
| 英文摘要 | Aiming at the epitaxial structure of the high-power 885nm laser diodes, the factors limiting the further increase of the output power and the power conversion efficiency were investigated. According to the analysis, the epitaxial structure of the laser diodes was optimized, and the influence of the waveguide layer thickness on the carrier absorption loss and the series resistance was theoretically simulated. The results showed that the asymmetric waveguide structure with the thickness ratio of the N-side and the P-side of 6:4 can reduce the carrier absorption loss to the greatest extent. Based on the simulation results, the 885nm laser bars with the optimized epitaxial structure were fabricated and tested under the ambient temperature of 25 in a quasi-continuous wave mode of 250μs and 200Hz. The slope efficiency reaches 1.26W/A, while the series resistance is only 1.2mω. The power of 277.6W is achieved at 250A injection current and the maximum power conversion efficiency exceeds 64%. © 2021 SPIE. |
| 产权排序 | 1 |
| 会议录 | Sixteenth National Conference on Laser Technology and Optoelectronics
 |
| 会议录出版者 | SPIE |
| 语种 | 英语 |
| ISSN号 | 0277786X;1996756X |
| ISBN号 | 9781510646636 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/95611]  |
| 专题 | 西安光学精密机械研究所_瞬态光学技术国家重点实验室 |
| 作者单位 | 1.State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Shannxi, Xi'an; 710119, China 2.State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Jilin, Changchun; 130022, China; |
| 推荐引用方式 GB/T 7714 | Wu, Shun-Hua,Li, Te,Wang, Dan,et al. Optimization of the epitaxial structure of low-loss 885nm high-power laser diodes[C]. 见:. Shanghai, China. 2021-06-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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