A NAND-SPIN-Based Magnetic ADC
文献类型：期刊论文
| 作者 | Wu, Bi4; Wang, Zhaohao1; Li, Yuxuan1; Wang, Ying2; Liu, Dijun3; Zhao, Weisheng1; Hu, Xiaobo Sharon5 |
| 刊名 | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
 |
| 出版日期 | 2021-02-01 |
| 卷号 | 68期号:2页码:617-621 |
| 关键词 | Switches Resistance Reliability Magnetic tunneling Tunneling magnetoresistance Sensors Magnetic devices Magnetic ADC NAND-SPIN multiple switching thresholds |
| ISSN号 | 1549-7747 |
| DOI | 10.1109/TCSII.2020.3013659 |
| 英文摘要 | This brief introduces a 3-bit magnetic analog-to-digital converter (MADC) employing the NAND-SPIN based multi-bit device which has the same structure as the NAND-SPIN memory cell. By adjusting the physical shape of the heavy metal (HM) line, the all-in-one integrated NAND-SPIN device exhibits multiple switching thresholds which could quantify the input current into several states and store them into the corresponding Magnetic Tunnel Junctions (MTJs). In order to read data reliably, a read port is connected to each Spin Orbit Torque (SOT) MTJs so as to minimize Tunnel Magnetoresistance (TMR) degradation due to non-uniform heavy metal resistance. In addition, an HM size adjustment methodology is proposed to improve the conversion accuracy and switching reliability. Detailed micromagnetic simulation results show that the proposed MADC could achieve 5 GHz sampling rate with only 0.068 pJ conversion energy, and in-memory conversion for higher bit resolution while provides the benefit of nonvolatility. |
| 资助项目 | National Natural Science Foundation of China[61704005] ; Fundamental Research Funds for the Central Universities[YWF20-BJ-J-1042] ; Beijing Municipal Science and Technology Project[Z201100004220002] |
| WOS研究方向 | Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000613561600015 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| 源URL | [http://119.78.100.204/handle/2XEOYT63/16272]  |
| 专题 | 中国科学院计算技术研究所期刊论文_英文 |
| 通讯作者 | Wang, Zhaohao; Zhao, Weisheng |
| 作者单位 | 1.Beihang Univ, Beijing Adv Innovat Ctr Big Data & Brain Comp, Sch Microelect, Fert Beijing Res Inst, Beijing 100191, Peoples R China 2.Chinese Acad Sci, Inst Comp Technol, Beijing 100190, Peoples R China 3.China Acad Informat & Commun Technol, Beijing 100191, Peoples R China 4.Beihang Univ, Sch Microelect, Sch Elect & Informat Engn, Fert Beijing Res Inst, Beijing 100191, Peoples R China 5.Univ Notre Dame, Dept Comp Sci & Engn, Notre Dame, IN 46656 USA |
| 推荐引用方式 GB/T 7714 | Wu, Bi,Wang, Zhaohao,Li, Yuxuan,et al. A NAND-SPIN-Based Magnetic ADC[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS,2021,68(2):617-621. |
| APA | Wu, Bi.,Wang, Zhaohao.,Li, Yuxuan.,Wang, Ying.,Liu, Dijun.,...&Hu, Xiaobo Sharon.(2021).A NAND-SPIN-Based Magnetic ADC.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS,68(2),617-621. |
| MLA | Wu, Bi,et al."A NAND-SPIN-Based Magnetic ADC".IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS 68.2(2021):617-621. |
入库方式： OAI收割
来源：计算技术研究所
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