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Field-Free 3T2SOT MRAM for Non-Volatile Cache Memories

文献类型：期刊论文

作者Wu, Bi3,4; Wang, Chao3; Wang, Zhaohao5; Wang, Ying2; Zhang, Deming3; Liu, Dijun1; Zhang, Youguang3; Hu, Xiaobo Sharon4
刊名IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
出版日期2020-12-01
卷号67期号:12页码:4660-4669
关键词Random access memory Magnetic tunneling Switches Reliability Tunneling magnetoresistance Metals Transistors SOT-MRAM low power high speed high reliability
ISSN号1549-8328
DOI10.1109/TCSI.2020.3020798
英文摘要Continued scaling of Complementary Metal Oxide Semiconductor (CMOS) integrated circuit technology is slowing down due to physical limitations, while the static power of CMOS based memory is increasing as the transistors shrink. As an alternative memory technology, the Spin Transfer Torque Magnetic RAM (STT-MRAM) remains limited to low-level, high-capacity caches because of the high write power and still unsatisfactory write access speed. Spin Orbit Torque MRAM (SOT-MRAM), which has been proposed to tackle this issue, still faces some issues including the poor read margin due to low Tunnel Magnetoresistance (TMR) and undesirable use of a magnetic field for deterministic switching. This article proposes a novel 3T2SOT (three Transistors and two SOT magnetic tunnel junctions) based field-free MRAM, which can achieve higher read speed and reliability by adopting a self-referencing scheme, and lower write power benefiting from an advanced switching mechanism. Detailed circuit-level simulation results show that the write latency of the proposed design can be reduced to 0.3 ns, and the write power is two orders of magnitude lower than STT-MRAM. Additionally, compared to SRAM, for 8 MB cache memory, the read speed of 3T2SOT MRAM is enhanced by 38.9%. Compared to conventional 2T1SOT MRAM, the read performance is similar and the read error rate is dropped by 96.1% at least.
资助项目National Natural Science Foundation of China[61704005] ; Fundamental Research Funds for the Central Universities[YWF20-BJ-J-1042] ; Beijing Municipal Science and Technology Project[Z201100004220002]
WOS研究方向Engineering
语种英语
WOS记录号WOS:000596021000042
出版者IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
源URL[http://119.78.100.204/handle/2XEOYT63/16574]  
专题中国科学院计算技术研究所期刊论文_英文
通讯作者Wang, Zhaohao; Zhang, Youguang
作者单位1.China Acad Informat & Commun Technol CAICT, Beijing 100191, Peoples R China
2.Chinese Acad Sci, Inst Comp Technol, Beijing 100190, Peoples R China
3.Beihang Univ, Fert Beijing Res Inst, Sch Elect & Informat Engn, Beijing 100191, Peoples R China
4.Univ Notre Dame, Dept Comp Sci & Engn, Notre Dame, IN 46656 USA
5.Beihang Univ, Beijing Adv Innovat Ctr Big Data & Brain Comp, Sch Microelect Fert Beijing Res Inst, Beijing 100191, Peoples R China
推荐引用方式
GB/T 7714		 Wu, Bi,Wang, Chao,Wang, Zhaohao,et al. Field-Free 3T2SOT MRAM for Non-Volatile Cache Memories[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS,2020,67(12):4660-4669.
APA Wu, Bi.,Wang, Chao.,Wang, Zhaohao.,Wang, Ying.,Zhang, Deming.,...&Hu, Xiaobo Sharon.(2020).Field-Free 3T2SOT MRAM for Non-Volatile Cache Memories.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS,67(12),4660-4669.
MLA Wu, Bi,et al."Field-Free 3T2SOT MRAM for Non-Volatile Cache Memories".IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS 67.12(2020):4660-4669.

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来源：计算技术研究所

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