Controlled synthesis and Raman study of a 2D antiferromagnetic P-type semiconductor: alpha-MnSe dagger
文献类型：期刊论文
| 作者 | Li, Ningning2,4; Zhu, Leilei3; Shang, Honghui3; Wang, Feng4; Zhang, Yu4; Yao, Yuyu2,4; Wang, Junjun4; Zhan, Xueying4; Wang, Fengmei4; He, Jun1,2,4 |
| 刊名 | NANOSCALE
 |
| 出版日期 | 2021-04-07 |
| 页码 | 12 |
| ISSN号 | 2040-3364 |
| DOI | 10.1039/d1nr00822f |
| 英文摘要 | Two-dimensional (2D) non-van der Waals magnetic materials have attracted considerable attention due to their high-temperature ferromagnetism, active surface/interface properties originating from dangling bonds, and good stability under ambient conditions. Here, we demonstrate the controlled synthesis and systematic Raman investigation of ultrathin non-van der Waals antiferromagnetic alpha-MnSe single crystals. Square and triangular nanosheets with different growth orientations can be achieved by introducing different precursors via the atmospheric chemical vapor deposition (APCVD) method. The temperature-dependent resonant enhancement in the Raman intensity of two peaks at 233.8 cm(-1) and 459.9 cm(-1) gives obvious evidence that the antiferromagnetic spin-ordering is below T-N similar to 160 K. Besides, a new peak located at 254.2 cm(-1), gradually appearing as the temperature decreased from 180 K to 100 K, may also be a signature of phase transition from paramagnetic to antiferromagnetic. The phonon dispersion spectra of alpha-MnSe simulated by density functional perturbation theory (DFPT) match well with the observed Raman signals. Moreover, a fabricated alpha-MnSe phototransistor exhibits p-type conducting behavior and high photodetection performance. We believe that these findings will be beneficial for the applications of 2D alpha-MnSe in magnetic and semiconducting fields. |
| 资助项目 | National Key R&D Program of China[2018YFA0703700] ; National Key R&D Program of China[2016YFA0200700] ; National Natural Science Foundation of China[91964203] ; National Natural Science Foundation of China[61625401] ; National Natural Science Foundation of China[61851403] ; National Natural Science Foundation of China[61974036] ; National Natural Science Foundation of China[61804035] ; National Natural Science Foundation of China[21805057] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000] ; CAS Key Laboratory of Nanosystem and Hierarchical Fabrication ; Youth Innovation Promotion Association CAS |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000637384300001 |
| 出版者 | ROYAL SOC CHEMISTRY |
| 源URL | [http://119.78.100.204/handle/2XEOYT63/16696]  |
| 专题 | 中国科学院计算技术研究所期刊论文_英文 |
| 通讯作者 | Wang, Zhenxing |
| 作者单位 | 1.Wuhan Univ, Sch Phys & Technol, Minist Educ, Key Lab Artificial Micro & Nanostruct, Wuhan 430072, Peoples R China 2.Univ Chinese Acad Sci, Sino Danish Ctr Educ & Res, Sino Danish Coll, Beijing 100049, Peoples R China 3.Chinese Acad Sci, Inst Comp Technol, Beijing 100049, Peoples R China 4.Natl Ctr Nanosci & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, CAS Ctr Excellence Nanosci, Beijing 100190, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Ningning,Zhu, Leilei,Shang, Honghui,et al. Controlled synthesis and Raman study of a 2D antiferromagnetic P-type semiconductor: alpha-MnSe dagger[J]. NANOSCALE,2021:12. |
| APA | Li, Ningning.,Zhu, Leilei.,Shang, Honghui.,Wang, Feng.,Zhang, Yu.,...&Wang, Zhenxing.(2021).Controlled synthesis and Raman study of a 2D antiferromagnetic P-type semiconductor: alpha-MnSe dagger.NANOSCALE,12. |
| MLA | Li, Ningning,et al."Controlled synthesis and Raman study of a 2D antiferromagnetic P-type semiconductor: alpha-MnSe dagger".NANOSCALE (2021):12. |
入库方式： OAI收割
来源：计算技术研究所
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