Anisotropic to Isotropic Transition in Monolayer Group-IV Tellurides
文献类型:期刊论文
作者 | Wang, Qian1; Wu, Liyuan2; Urban, Alexander3; Cao, Huawei4; Lu, Pengfei1 |
刊名 | MATERIALS |
出版日期 | 2021-08-01 |
卷号 | 14期号:16页码:12 |
关键词 | two-dimensional materials group-IV tellurides anisotropic structure |
DOI | 10.3390/ma14164495 |
英文摘要 | Monolayer group-IV tellurides with phosphorene-derived structures are attracting increasing research interest because of their unique properties. Here, we systematically studied the quasiparticle electronic and optical properties of two-dimensional group-IV tellurides (SiTe, GeTe, SnTe, PbTe) using the GW and Bethe-Salpeter equation method. The calculations revealed that all group-IV tellurides are indirect bandgap semiconductors except for monolayer PbTe with a direct gap of 1.742 eV, while all of them are predicted to have prominent carrier transport ability. We further found that the excitonic effect has a significant impact on the optical properties for monolayer group-IV tellurides, and the predicted exciton binding energy is up to 0.598 eV for SiTe. Interestingly, the physical properties of monolayer group-IV tellurides were subject to an increasingly isotropic trend: from SiTe to PbTe, the differences of the calculated quasiparticle band gap, optical gap, and further exciton binding energy along different directions tended to decrease. We demonstrated that these anisotropic electronic and optical properties originate from the structural anisotropy, which in turn is the result of Coulomb repulsion between non-bonding electron pairs. Our theoretical results provide a deeper understanding of the anisotropic properties of group-IV telluride monolayers. |
资助项目 | National Natural Science Foundation of China[11904370] ; Fund of State Key Laboratory of IPOC (BUPT), P. R. China[IPOC2019ZZ04] ; Open-Foundation of Key Laboratory of Laser Device Technology, China North Industries Group Corporation Limited[KLLDT202001] ; China Scholarship Council (CSC)[201906470009] ; BUPT Excellent Ph.D. Students Foundation[CX2020317] |
WOS研究方向 | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering ; Physics |
语种 | 英语 |
出版者 | MDPI |
WOS记录号 | WOS:000690499700001 |
源URL | [http://119.78.100.204/handle/2XEOYT63/17117] |
专题 | 中国科学院计算技术研究所期刊论文_英文 |
通讯作者 | Cao, Huawei; Lu, Pengfei |
作者单位 | 1.Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China 2.Chinese Acad Sci, Inst High Energy Phys, CAS Key Lab Biomed Effects Nanomat & Nanosafety, Beijing 100049, Peoples R China 3.Columbia Univ, Dept Chem Engn, New York, NY 10027 USA 4.Chinese Acad Sci, Inst Comp Technol, State Key Lab Comp Architecture, Beijing 100190, Peoples R China |
推荐引用方式 GB/T 7714 | Wang, Qian,Wu, Liyuan,Urban, Alexander,et al. Anisotropic to Isotropic Transition in Monolayer Group-IV Tellurides[J]. MATERIALS,2021,14(16):12. |
APA | Wang, Qian,Wu, Liyuan,Urban, Alexander,Cao, Huawei,&Lu, Pengfei.(2021).Anisotropic to Isotropic Transition in Monolayer Group-IV Tellurides.MATERIALS,14(16),12. |
MLA | Wang, Qian,et al."Anisotropic to Isotropic Transition in Monolayer Group-IV Tellurides".MATERIALS 14.16(2021):12. |
入库方式: OAI收割
来源:计算技术研究所
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