Hot filament chemical vapor deposition temperature field optimization for diamond films deposited on silicon nitride substrates
文献类型：期刊论文
| 作者 | Wu, Yuhou4; Zhang, Huisen3,4; Yan, Guangyu3,4; Liu, Lusheng2; Cristea, Daniel1; Wang, He3,4; Yang, Yumiao3,4; Shen, Jianhui3,4 |
| 刊名 | MATERIALS RESEARCH EXPRESS
 |
| 出版日期 | 2021-11-01 |
| 卷号 | 8期号:11页码:15 |
| 关键词 | HFCVD diamond film numerical simulation |
| DOI | 10.1088/2053-1591/ac3278 |
| 通讯作者 | Yan, Guangyu(ygy0813@sjzu.edu.cn) |
| 英文摘要 | The influence of some key parameters of hot filament chemical vapor deposition (HFCVD) on the temperature distribution during the deposition of diamond coatings on silicon nitride (Si3N4) substrates was assessed with the help of the finite element method. Solid heat transfer, fluid heat transfer and surface radiation heat transfer mechanisms were used to calculate the substrate temperature in the steady state during the deposition process. The accuracy of the model was verified by comparing the simulation model with experimental measurements. The comparison shows that the deviation between the model and the actual substrate temperature measurements is within 3%. Furthermore, a Taguchi orthogonal experiment was designed (3 factors, 3 levels, L9). By changing the number of hot filaments, the distance between the filaments and the substrate, and the separation between two adjacent hot filaments, the influence trend of these parameters on the substrate temperature was assessed, leading to an optimal hot filament arrangement. A deposition experiment was carried out using the optimized parameters, and the results showed that the substrate surface temperature obtained by numerical simulation is highly consistent with the temperature measured by the infrared thermometer. The optimized deposition parameters contributed to a more suitable temperature range and more uniform temperature distribution on the Si3N4 ceramic substrate. The deposited diamond film exhibited uniform crystal quality and grain morphology, thus verifying the validity of the simulation results. |
| 资助项目 | Programme of Introducing Talents of Discipline to Universities (the 111 program)[D18017] ; National Natural Science Foundation of China[51942507] ; Shenyang Science and Technology Bureau[18-400-6-05] |
| WOS研究方向 | Materials Science |
| 语种 | 英语 |
| 出版者 | IOP Publishing Ltd |
| WOS记录号 | WOS:000717278500001 |
| 资助机构 | Programme of Introducing Talents of Discipline to Universities (the 111 program) ; National Natural Science Foundation of China ; Shenyang Science and Technology Bureau |
| 源URL | [http://ir.imr.ac.cn/handle/321006/167208]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Yan, Guangyu |
| 作者单位 | 1.Transilvania Univ, Mat Sci & Engn Fac, Brasov 500036, Romania 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 3.Shenyang Jianzhu Univ, Sch Mech Engn, Shenyang 110168, Peoples R China 4.Shenyang Jianzhu Univ, Joint Int Res Lab Modern Construct Engn Equipment, Shenyang 110168, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wu, Yuhou,Zhang, Huisen,Yan, Guangyu,et al. Hot filament chemical vapor deposition temperature field optimization for diamond films deposited on silicon nitride substrates[J]. MATERIALS RESEARCH EXPRESS,2021,8(11):15. |
| APA | Wu, Yuhou.,Zhang, Huisen.,Yan, Guangyu.,Liu, Lusheng.,Cristea, Daniel.,...&Shen, Jianhui.(2021).Hot filament chemical vapor deposition temperature field optimization for diamond films deposited on silicon nitride substrates.MATERIALS RESEARCH EXPRESS,8(11),15. |
| MLA | Wu, Yuhou,et al."Hot filament chemical vapor deposition temperature field optimization for diamond films deposited on silicon nitride substrates".MATERIALS RESEARCH EXPRESS 8.11(2021):15. |
入库方式： OAI收割
来源：金属研究所
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